SI4963DY MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SI4963DY
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 4.6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 0.6 V
   Qgⓘ - Carga de la puerta: 35 nC
   trⓘ - Tiempo de subida: 30 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.033 Ohm
   Paquete / Cubierta: SO8

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SI4963DY Datasheet (PDF)

..1. Size:89K vishay
si4963dy 2.pdf

Si4963DYVishay SiliconixDual P-Channel 2.5-V (G-S) MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETVDS (V) rDS(on) (W) ID (A)D Lead (Pb)-Free Version is RoHSAvailableCompliant0.033 @ VGS = -4.5 V-6.2-20-200.050 @ VGS = -2.5 V -5S1 S2SO-8S1 1 D18G1 G2G1 2 D17S2 3 D26G2 4 D25D1 D2Top ViewP-Channel MOSFET P-Channel MOSFETOrdering Info

..2. Size:39K vishay
si4963dy.pdf

Si4963DYVishay SiliconixDual P-Channel 2.5-V (G-S) MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETVDS (V) rDS(on) (W) ID (A)0.033 @ VGS = -4.5 V-6.2-20-200.050 @ VGS = - 2.5 V -5S1 S2SO-8S1 1 D18G1 G2G1 2 D17S2 3 D26G2 4 D25Top ViewD1 D2P-Channel MOSFET P-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Paramet

8.1. Size:223K vishay
si4963bdy.pdf

Si4963BDYVishay SiliconixDual P-Channel 2.5-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.032 at VGS = - 4.5 V - 6.5 Compliant to RoHS Directive 2002/95/EC- 200.050 at VGS = - 2.5 V - 5.2S1 S2SO-8S1 1 D18G1 2 D17G1 G2S2 3 D26G2 4 D25Top ViewD1 D2Ordering Informat

9.1. Size:235K vishay
si4967dy.pdf

Si4967DYVishay SiliconixDual P-Channel 1.8-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.023 at VGS = - 4.5 V - 7.5 TrenchFET Power MOSFETs: 1.8 V Rated 0.030 at VGS = - 2.5 V - 12 - 6.7 Compliant to RoHS Directive 2002/95/EC0.045 at VGS = - 1.8 V - 5.4S1 S2SO-8S1 1 D18G

9.2. Size:237K vishay
si4965dy.pdf

Si4965DYVishay SiliconixDual P-Channel 1.8-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.021 at VGS = - 4.5 V - 8.0 TrenchFET Power MOSFETs: 1.8 V Rated0.027 at VGS = - 2.5 V - 8 - 7.0 Compliant to RoHS Directive 2002/95/EC0.040 at VGS = - 1.8 V - 5.8S1 S2SO-8S1 1 D18G1

9.3. Size:238K vishay
si4966dy.pdf

Si4966DYVishay SiliconixDual N-Channel 2.5-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.025 at VGS = 4.5 V 7.1 TrenchFET Power MOSFET200.035 at VGS = 2.5 V 6.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECSO-8D1 D2S1 1 D18G1 2 D17S2 3 D26G2 4

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