SI4963DY Datasheet and Replacement. Cross Reference Search

SI4963DY Datasheet (PDF)

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Si4963DYVishay SiliconixDual P-Channel 2.5-V (G-S) MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETVDS (V) rDS(on) (W) ID (A)D Lead (Pb)-Free Version is RoHSAvailableCompliant0.033 @ VGS = -4.5 V-6.2-20-200.050 @ VGS = -2.5 V -5S1 S2SO-8S1 1 D18G1 G2G1 2 D17S2 3 D26G2 4 D25D1 D2Top ViewP-Channel MOSFET P-Channel MOSFETOrdering Info

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Si4963DYVishay SiliconixDual P-Channel 2.5-V (G-S) MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETVDS (V) rDS(on) (W) ID (A)0.033 @ VGS = -4.5 V-6.2-20-200.050 @ VGS = - 2.5 V -5S1 S2SO-8S1 1 D18G1 G2G1 2 D17S2 3 D26G2 4 D25Top ViewD1 D2P-Channel MOSFET P-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Paramet

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Si4963BDYVishay SiliconixDual P-Channel 2.5-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.032 at VGS = - 4.5 V - 6.5 Compliant to RoHS Directive 2002/95/EC- 200.050 at VGS = - 2.5 V - 5.2S1 S2SO-8S1 1 D18G1 2 D17G1 G2S2 3 D26G2 4 D25Top ViewD1 D2Ordering Informat

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Si4967DYVishay SiliconixDual P-Channel 1.8-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.023 at VGS = - 4.5 V - 7.5 TrenchFET Power MOSFETs: 1.8 V Rated 0.030 at VGS = - 2.5 V - 12 - 6.7 Compliant to RoHS Directive 2002/95/EC0.045 at VGS = - 1.8 V - 5.4S1 S2SO-8S1 1 D18G