FS8205A Todos los transistores

 ..1. Size:391K  can-sheng
 fs8205a tssop-8.pdf

 ..2. Size:302K  fortune semi
 fs8205a.pdf

REV. 1.2 FS8205A-DS-12_EN AUG 2009 Datasheet FS8205A Dual N-Channel Enhancement Mode Power MOSFET Only FSC Properties Reference For FS8205A Fortune Semiconductor Corporation 28F., No.27, Sec. 2, Zhongzheng E. Rd., Danshui Town, Taipei County 251, Taiwan Tel. 886-2-28094742 Fax 886-2-28094874 www.ic-fortune.com This manual contai

 ..3. Size:4365K  fuxinsemi
 fs8205a.pdf

FS8205A N-Channel Enhancement Mode MOSFET Product Summary V(BR)DSS RDS(on)MAX ID 25m @4.5V 20V 6A 32m @2.5V Feature Application Advanced trench process technology Battery protection High density cell design for ultra low on-resistance Switching application Package Circuit diagram SOT-23-6L Marking G1 D1/D2 G2 8205A S1 D1/D2 S2 www.fuxinsemi.com Page 1 Ver2.1 FS

 ..4. Size:1795K  cn tech public
 fs8205a.pdf

 8.1. Size:401K  fortune semi
 fs8205.pdf

REV. 1.7 FS8205-DS-17_EN NOV 2011 Datasheet FS8205 Dual N-Channel Enhancement Mode Power MOSFET Only FORTUNE' Properties Reference For FS8205 Fortune Semiconductor Corporation 28F.,No.27, Sec. 2, Zhongzheng E. Rd., Danshui Dist, New Taipei City 251, Taiwan Tel. 886-2-28094742 Fax 886-2-28094874 www.ic-fortune.com This manual conta

 9.1. Size:284K  1
 irfs820 irfs821.pdf

 9.2. Size:310K  1
 irfs820 irfs821 irfs822 irfs823.pdf

 9.3. Size:866K  fairchild semi
 irf820b irfs820b.pdf

 9.4. Size:502K  samsung
 irfs820a.pdf

Advanced Power MOSFET FEATURES BVDSS = 500 V Avalanche Rugged Technology RDS(on) = 3.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.1 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 500V Lower RDS(ON) 2.000 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Va

 9.5. Size:1876K  infineon
 fs820r08a6p2b.pdf

HybridPACK Drive Module FS820R08A6P2B Final Data Sheet V3.1, 2019-10-10 Automotive High Power FS820R08A6P2B HybridPACK Drive Module 1 Features / Description HybridPACK Drive module with EDT2 IGBT and Diode T T T V = 750 V CES I = 820 A C Typical Applications Description Automotive Applications The HybridPACKTM Drive is a very compact six-pack module (750V/820A) op