FS8205A Specs and Replacement
Type Designator: FS8205A
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 19.5 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 315 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm
Package: TSSOP8
FS8205A substitution
- MOSFET ⓘ Cross-Reference Search
FS8205A datasheet
fs8205a.pdf
REV. 1.2 FS8205A-DS-12_EN AUG 2009 Datasheet FS8205A Dual N-Channel Enhancement Mode Power MOSFET Only FSC Properties Reference For FS8205A Fortune Semiconductor Corporation 28F., No.27, Sec. 2, Zhongzheng E. Rd., Danshui Town, Taipei County 251, Taiwan Tel. 886-2-28094742 Fax 886-2-28094874 www.ic-fortune.com This manual contai... See More ⇒
fs8205a.pdf
FS8205A N-Channel Enhancement Mode MOSFET Product Summary V(BR)DSS RDS(on)MAX ID 25m @4.5V 20V 6A 32m @2.5V Feature Application Advanced trench process technology Battery protection High density cell design for ultra low on-resistance Switching application Package Circuit diagram SOT-23-6L Marking G1 D1/D2 G2 8205A S1 D1/D2 S2 www.fuxinsemi.com Page 1 Ver2.1 FS... See More ⇒
Detailed specifications: BRF8N80, CS1N60D, CS2N60D, CS4N60D, CS1N60, CS4N65, CS2300, CS8205, AO3400, CS2301, CS2302, CS3401, YW3407, CS8205B, CS8205A, BRI1N60, BRI20N03
Keywords - FS8205A MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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