FS8205A MOSFET. Datasheet pdf. Equivalent
Type Designator: FS8205A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 19.5 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 11 nC
trⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 315 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm
Package: TSSOP8
FS8205A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FS8205A Datasheet (PDF)
fs8205a.pdf
REV. 1.2 FS8205A-DS-12_EN AUG 2009Datasheet FS8205A Dual N-Channel Enhancement Mode Power MOSFET OnlyFSCPropertiesReferenceForFS8205A Fortune Semiconductor Corporation 28F., No.27, Sec. 2, Zhongzheng E. Rd., Danshui Town, Taipei County 251, Taiwan Tel.886-2-28094742 Fax886-2-28094874 www.ic-fortune.com This manual contai
fs8205a.pdf
FS8205AN-Channel Enhancement Mode MOSFETProduct Summary V(BR)DSS RDS(on)MAX ID 25m@4.5V 20V 6A 32m@2.5V Feature Application Advanced trench process technology Battery protection High density cell design for ultra low on-resistance Switching application Package Circuit diagramSOT-23-6L Marking G1 D1/D2 G2 8205AS1 D1/D2 S2 www.fuxinsemi.com Page 1 Ver2.1FS
fs8205.pdf
REV. 1.7 FS8205-DS-17_EN NOV 2011 Datasheet FS8205 Dual N-Channel Enhancement Mode Power MOSFET OnlyFORTUNE'PropertiesReferenceForFS8205 Fortune Semiconductor Corporation 28F.,No.27, Sec. 2, Zhongzheng E. Rd., Danshui Dist, New Taipei City 251, Taiwan Tel.886-2-28094742 Fax886-2-28094874 www.ic-fortune.com This manual conta
irf820b irfs820b.pdf
November 2001IRF820B/IRFS820B500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.5A, 500V, RDS(on) = 2.6 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 14 nC)planar, DMOS technology. Low Crss ( typical 10 pF)This advanced technology has been especially tailored to
irfs820a.pdf
Advanced Power MOSFETFEATURESBVDSS = 500 V Avalanche Rugged TechnologyRDS(on) = 3.0 Rugged Gate Oxide Technology Lower Input CapacitanceID = 2.1 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 500V Lower RDS(ON) : 2.000 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Va
fs820r08a6p2b.pdf
HybridPACK Drive ModuleFS820R08A6P2BFinal Data SheetV3.1, 2019-10-10Automotive High PowerFS820R08A6P2BHybridPACK Drive Module1 Features / DescriptionHybridPACK Drive module with EDT2 IGBT and DiodeTTTV = 750 VCESI = 820 ACTypical Applications DescriptionAutomotive Applications The HybridPACKTM Drive is a very compactsix-pack module (750V/820A) op
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