Справочник MOSFET. FS8205A

 

FS8205A MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FS8205A
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 1.25 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 19.5 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 10 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 4 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 12 ns
   Cossⓘ - Выходная емкость: 315 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.027 Ohm
   Тип корпуса: TSSOP8

 Аналог (замена) для FS8205A

 

 

FS8205A Datasheet (PDF)

 ..1. Size:391K  can-sheng
 fs8205a tssop-8.pdf

FS8205A FS8205A

 ..2. Size:302K  fortune semi
 fs8205a.pdf

FS8205A FS8205A

REV. 1.2 FS8205A-DS-12_EN AUG 2009Datasheet FS8205A Dual N-Channel Enhancement Mode Power MOSFET OnlyFSCPropertiesReferenceForFS8205A Fortune Semiconductor Corporation 28F., No.27, Sec. 2, Zhongzheng E. Rd., Danshui Town, Taipei County 251, Taiwan Tel.886-2-28094742 Fax886-2-28094874 www.ic-fortune.com This manual contai

 ..3. Size:4365K  fuxinsemi
 fs8205a.pdf

FS8205A FS8205A

FS8205AN-Channel Enhancement Mode MOSFETProduct Summary V(BR)DSS RDS(on)MAX ID 25m@4.5V 20V 6A 32m@2.5V Feature Application Advanced trench process technology Battery protection High density cell design for ultra low on-resistance Switching application Package Circuit diagramSOT-23-6L Marking G1 D1/D2 G2 8205AS1 D1/D2 S2 www.fuxinsemi.com Page 1 Ver2.1FS

 ..4. Size:1795K  cn tech public
 fs8205a.pdf

FS8205A FS8205A

 8.1. Size:401K  fortune semi
 fs8205.pdf

FS8205A FS8205A

REV. 1.7 FS8205-DS-17_EN NOV 2011 Datasheet FS8205 Dual N-Channel Enhancement Mode Power MOSFET OnlyFORTUNE'PropertiesReferenceForFS8205 Fortune Semiconductor Corporation 28F.,No.27, Sec. 2, Zhongzheng E. Rd., Danshui Dist, New Taipei City 251, Taiwan Tel.886-2-28094742 Fax886-2-28094874 www.ic-fortune.com This manual conta

 9.1. Size:284K  1
 irfs820 irfs821.pdf

FS8205A FS8205A

 9.2. Size:310K  1
 irfs820 irfs821 irfs822 irfs823.pdf

FS8205A FS8205A

 9.3. Size:866K  fairchild semi
 irf820b irfs820b.pdf

FS8205A FS8205A

November 2001IRF820B/IRFS820B500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.5A, 500V, RDS(on) = 2.6 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 14 nC)planar, DMOS technology. Low Crss ( typical 10 pF)This advanced technology has been especially tailored to

 9.4. Size:502K  samsung
 irfs820a.pdf

FS8205A FS8205A

Advanced Power MOSFETFEATURESBVDSS = 500 V Avalanche Rugged TechnologyRDS(on) = 3.0 Rugged Gate Oxide Technology Lower Input CapacitanceID = 2.1 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 500V Lower RDS(ON) : 2.000 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Va

 9.5. Size:1876K  infineon
 fs820r08a6p2b.pdf

FS8205A FS8205A

HybridPACK Drive ModuleFS820R08A6P2BFinal Data SheetV3.1, 2019-10-10Automotive High PowerFS820R08A6P2BHybridPACK Drive Module1 Features / DescriptionHybridPACK Drive module with EDT2 IGBT and DiodeTTTV = 750 VCESI = 820 ACTypical Applications DescriptionAutomotive Applications The HybridPACKTM Drive is a very compactsix-pack module (750V/820A) op

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