HUF76439S3S Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HUF76439S3S  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 180 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 16 V

|Id|ⓘ - Corriente continua de drenaje: 71 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.014 Ohm

Encapsulados: TO263AB

  📄📄 Copiar 

 Búsqueda de reemplazo de HUF76439S3S MOSFET

- Selecciónⓘ de transistores por parámetros

 

HUF76439S3S datasheet

 ..1. Size:210K  fairchild semi
huf76439s3s.pdf pdf_icon

HUF76439S3S

HUF76439P3, HUF76439S3S Data Sheet December 2001 71A, 60V, 0.014 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-220AB JEDEC TO-263AB Ultra Low On-Resistance - rDS(ON) = 0.012 , VGS = 10V SOURCE DRAIN - rDS(ON) = 0.014 , VGS = 5V DRAIN (FLANGE) GATE Simulation Models - Temperature Compensated PSPICE and SABER GATE Electrical

 0.1. Size:209K  fairchild semi
huf76439s3st.pdf pdf_icon

HUF76439S3S

HUF76439P3, HUF76439S3S Data Sheet December 2001 71A, 60V, 0.014 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-220AB JEDEC TO-263AB Ultra Low On-Resistance - rDS(ON) = 0.012 , VGS = 10V SOURCE DRAIN - rDS(ON) = 0.014 , VGS = 5V DRAIN (FLANGE) GATE Simulation Models - Temperature Compensated PSPICE and SABER GATE Electrical

 7.1. Size:215K  fairchild semi
huf76437s3st.pdf pdf_icon

HUF76439S3S

HUF76437P3, HUF76437S3S Data Sheet December 2001 64A, 60V, 0.017 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-220AB JEDEC TO-263AB Ultra Low On-Resistance SOURCE DRAIN - rDS(ON) = 0.014 , VGS = 10V DRAIN (FLANGE) GATE - rDS(ON) = 0.017 , VGS = 5V Simulation Models GATE - Temperature Compensated PSPICE and SABER SOURCE Ele

 7.2. Size:221K  fairchild semi
huf76432p3-s3s.pdf pdf_icon

HUF76439S3S

HUF76432P3, HUF76432S3S Data Sheet December 2001 55A, 60V, 0.019 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging JEDEC TO-220AB JEDEC TO-263AB Features Ultra Low On-Resistance SOURCE DRAIN DRAIN (FLANGE) - rDS(ON) = 0.017 , VGS = 10V GATE - rDS(ON) = 0.019 , VGS = 5V GATE Simulation Models - Temperature Compensated PSPICE and SABER SOURCE Electr

Otros transistores... HUF76429D3S, HUF76429P3, HUF76429S3S, HUF76432P3, HUF76432S3S, HUF76437P3, HUF76437S3S, HUF76439P3, IRF530, HUF76443P3, HUF76443S3S, HUF76445P3, HUF76445S3S, HUF76609D3, HUF76609D3S, HUF76619D3, HUF76619D3S