2SJ231 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SJ231
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 15 V
   |Id|ⓘ - Corriente continua de drenaje: 0.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 40 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.4 Ohm
   Paquete / Cubierta: NMP

Búsqueda de reemplazo de MOSFET 2SJ231

2SJ231 Datasheet (PDF)

..1. Size:86K sanyo
2sj231.pdf

Ordering number:EN3816P-Channel Silicon MOSFET2SJ231Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2087A Low-voltage drive.[2SJ231]2.5 Meets radial taping.1.456.9 1.00.60.9 0.51 2 30.451 : Source2 : Drain3 : Gate2.54 2.54SANYO : NMPSpecificationsAbsolute Maximum R

9.1. Size:152K toshiba
2sj239.pdf

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9.2. Size:329K toshiba
2sj238.pdf

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9.3. Size:88K sanyo
2sj232.pdf

Ordering number:EN3817P-Channel Silicon MOSFET2SJ232Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2085A Low-voltage drive.[2SJ232]4.5 Its height onboard is 9.5mm.1.9 2.610.51.2 1.4 Meets radial taping.1.20.51.60.51 2 31 : Source2 : Drain3 : Gate2.5 2.5SANYO

9.4. Size:88K sanyo
2sj230.pdf

Ordering number:EN3815P-Channel Silicon MOSFET2SJ230Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2085A Low-voltage drive.[2SJ230]4.5 Its height onboard is 9.5mm.1.9 2.610.51.2 1.4 Meets radial taping.1.20.51.60.51 2 31 : Source2 : Drain3 : Gate2.5 2.5SANYO

9.5. Size:88K sanyo
2sj233.pdf

Ordering number:EN3818P-Channel Silicon MOSFET2SJ233Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2085A Low-voltage drive.[2SJ233]4.5 Its height onboard is 9.5mm.1.9 2.610.51.2 1.4 Meets radial taping.1.20.51.60.51 2 31 : Source2 : Drain3 : Gate2.5 2.5SANYO

9.6. Size:54K hitachi
2sj234s-l.pdf

2SJ234(L), 2SJ234(S)Silicon P-Channel MOS FETNovember 1996ApplicationHigh speed power switchingFeatures Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source Suitable for DC-DC converter, motor drive, power switch, solenoid driveOutlineDPAK-144123123D1. Gate G2. Drain 3.

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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