2SJ231 - описание и поиск аналогов

 ..1. Size:86K  sanyo
 2sj231.pdf 

Ordering number EN3816 P-Channel Silicon MOSFET 2SJ231 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2087A Low-voltage drive. [2SJ231] 2.5 Meets radial taping. 1.45 6.9 1.0 0.6 0.9 0.5 1 2 3 0.45 1 Source 2 Drain 3 Gate 2.54 2.54 SANYO NMP Specifications Absolute Maximum R

 9.1. Size:152K  toshiba
 2sj239.pdf 

Free Datasheet http //www.datasheet4u.com/ Free Datasheet http //www.datasheet4u.com/ Free Datasheet http //www.datasheet4u.com/ Free Datasheet http //www.datasheet4u.com/ Free Datasheet http //www.datasheet4u.com/

 9.2. Size:329K  toshiba
 2sj238.pdf 

www.DataSheet4U.com 4 DataSheet U.com www.DataSheet4U.com 4 DataSheet U.com www.DataSheet4U.com 4 DataSheet U.com www.DataSheet4U.com 4 DataSheet U.com www.DataSheet4U.com 4 DataSheet U.com

 9.3. Size:88K  sanyo
 2sj232.pdf 

Ordering number EN3817 P-Channel Silicon MOSFET 2SJ232 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2085A Low-voltage drive. [2SJ232] 4.5 Its height onboard is 9.5mm. 1.9 2.6 10.5 1.2 1.4 Meets radial taping. 1.2 0.5 1.6 0.5 1 2 3 1 Source 2 Drain 3 Gate 2.5 2.5 SANYO

 9.4. Size:88K  sanyo
 2sj230.pdf 

Ordering number EN3815 P-Channel Silicon MOSFET 2SJ230 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2085A Low-voltage drive. [2SJ230] 4.5 Its height onboard is 9.5mm. 1.9 2.6 10.5 1.2 1.4 Meets radial taping. 1.2 0.5 1.6 0.5 1 2 3 1 Source 2 Drain 3 Gate 2.5 2.5 SANYO

 9.5. Size:88K  sanyo
 2sj233.pdf 

Ordering number EN3818 P-Channel Silicon MOSFET 2SJ233 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2085A Low-voltage drive. [2SJ233] 4.5 Its height onboard is 9.5mm. 1.9 2.6 10.5 1.2 1.4 Meets radial taping. 1.2 0.5 1.6 0.5 1 2 3 1 Source 2 Drain 3 Gate 2.5 2.5 SANYO

 9.6. Size:54K  hitachi
 2sj234s-l.pdf 

2SJ234(L), 2SJ234(S) Silicon P-Channel MOS FET November 1996 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source Suitable for DC-DC converter, motor drive, power switch, solenoid drive Outline DPAK-1 4 4 1 2 3 1 2 3 D 1. Gate G 2. Drain 3.