2SJ231 MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SJ231
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 1 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 15 V
Maximum Drain Current |Id|: 0.5 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 12 nS
Drain-Source Capacitance (Cd): 40 pF
Maximum Drain-Source On-State Resistance (Rds): 2.4 Ohm
Package: NMP
2SJ231 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SJ231 Datasheet (PDF)
1.1. 2sj231.pdf 
Size:86K _sanyo
Ordering number:EN3816 P-Channel Silicon MOSFET 2SJ231 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2087A Low-voltage drive. [2SJ231] 2.5 Meets radial taping. 1.45 6.9 1.0 0.6 0.9 0.5 1 2 3 0.45 1 : Source 2 : Drain 3 : Gate 2.54 2.54 SANYO : NMP Specifications Absolute Maximum Ratings
5.1. 2sj239.pdf Size:152K _upd
5.2. 2sj234s-l.pdf Size:54K _upd
2SJ234(L), 2SJ234(S) Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device Can be driven from 5 V source • Suitable for DC-DC converter, motor drive, power switch, solenoid drive Outline DPAK-1 4 4 1 2 3 1 2 3 D 1. Gate G 2. Drain 3.
5.3. 2sj238.pdf Size:329K _toshiba
5.4. 2sj232.pdf Size:88K _sanyo
Ordering number:EN3817 P-Channel Silicon MOSFET 2SJ232 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2085A Low-voltage drive. [2SJ232] 4.5 Its height onboard is 9.5mm. 1.9 2.6 10.5 1.2 1.4 Meets radial taping. 1.2 0.5 1.6 0.5 1 2 3 1 : Source 2 : Drain 3 : Gate 2.5 2.5 SANYO : FLP S
5.5. 2sj230.pdf Size:88K _sanyo
Ordering number:EN3815 P-Channel Silicon MOSFET 2SJ230 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2085A Low-voltage drive. [2SJ230] 4.5 Its height onboard is 9.5mm. 1.9 2.6 10.5 1.2 1.4 Meets radial taping. 1.2 0.5 1.6 0.5 1 2 3 1 : Source 2 : Drain 3 : Gate 2.5 2.5 SANYO : FLP S
5.6. 2sj233.pdf Size:88K _sanyo
Ordering number:EN3818 P-Channel Silicon MOSFET 2SJ233 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2085A Low-voltage drive. [2SJ233] 4.5 Its height onboard is 9.5mm. 1.9 2.6 10.5 1.2 1.4 Meets radial taping. 1.2 0.5 1.6 0.5 1 2 3 1 : Source 2 : Drain 3 : Gate 2.5 2.5 SANYO : FLP S
Datasheet: IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC , IRFP3710 , J111 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP441 , IRFP442 , IRFP443 .
