2SJ231 Datasheet and Replacement
Type Designator: 2SJ231
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
|Id| ⓘ - Maximum Drain Current: 0.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 40 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.4 Ohm
Package: NMP
2SJ231 substitution
2SJ231 Datasheet (PDF)
2sj231.pdf
Ordering number:EN3816P-Channel Silicon MOSFET2SJ231Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2087A Low-voltage drive.[2SJ231]2.5 Meets radial taping.1.456.9 1.00.60.9 0.51 2 30.451 : Source2 : Drain3 : Gate2.54 2.54SANYO : NMPSpecificationsAbsolute Maximum R
2sj239.pdf
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2sj238.pdf
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2sj232.pdf
Ordering number:EN3817P-Channel Silicon MOSFET2SJ232Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2085A Low-voltage drive.[2SJ232]4.5 Its height onboard is 9.5mm.1.9 2.610.51.2 1.4 Meets radial taping.1.20.51.60.51 2 31 : Source2 : Drain3 : Gate2.5 2.5SANYO
Datasheet: 2SK1740 , 2SK1747 , 2SJ225 , 2SJ226 , 2SJ227 , 2SJ228 , 2SJ229 , 2SJ230 , IRFP260 , 2SJ232 , 2SJ233 , 2SJ254 , 2SJ255 , 2SJ256 , 2SJ257 , 2SJ258 , 2SJ259 .
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