2SJ264 Todos los transistores

 

2SJ264 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SJ264
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 40 nS
   Cossⓘ - Capacitancia de salida: 390 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.15 Ohm
   Paquete / Cubierta: TO220ML
 

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2SJ264 Datasheet (PDF)

 ..1. Size:101K  sanyo
 2sj264.pdf pdf_icon

2SJ264

Ordering number:EN4746P-Channel Silicon MOSFET2SJ264Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2063A Low-voltage drive.[2SJ264] Micaless package facilitating easy mounting.4.510.02.83.22.41.61.20.70.751 2 31 : Gate2.55 2.552 : Drain3 : Source2.55 2.55SANYO

 9.1. Size:106K  sanyo
 2sj265.pdf pdf_icon

2SJ264

Ordering number:EN4235P-Channel Silicon MOSFET2SJ265Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2063A Low-voltage drive.[2SJ265] Micaless package facilitating mounting.4.510.02.83.22.41.61.20.70.751 2 31 : Gate2.55 2.552 : Drain3 : Source2.55 2.55SANYO : TO

 9.2. Size:103K  sanyo
 2sj263.pdf pdf_icon

2SJ264

Ordering number:EN4234P-Channel Silicon MOSFET2SJ263Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2063A Low-voltage drive.[2SJ263] Micaless package facilitating mounting.4.510.02.83.22.41.61.20.70.751 2 31 : Gate2.55 2.552 : Drain3 : Source2.55 2.55SANYO : TO

 9.3. Size:91K  sanyo
 2sj267.pdf pdf_icon

2SJ264

Ordering number:EN4747P-Channel Silicon MOSFET2SJ267Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2090A Low-voltage drive.[2SJ267] Surface mount type device making the following10.24.51.3possible. Reduction in the assembling time for 2SJ267-applied equipment. High-density

MOSTRAR MÁS

Otros transistores... 2SK1897 , 2SK1898 , 2SK1899 , 2SJ591LS , 2SJ594 , 2SJ595 , 2SJ596 , 2SJ263 , IRF520 , 2SJ265 , 2SJ266 , 2SJ267 , 2SJ268 , 2SJ272 , 2SJ273 , 2SJ274 , 2SJ275 .

History: VBE165R07 | C3M0065100K

 

 
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