2SJ264 MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SJ264
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 25 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 8 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 40 nS
Drain-Source Capacitance (Cd): 390 pF
Maximum Drain-Source On-State Resistance (Rds): 0.15 Ohm
Package: TO220ML
2SJ264 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SJ264 Datasheet (PDF)
1.1. 2sj264.pdf 
Size:101K _sanyo
Ordering number:EN4746 P-Channel Silicon MOSFET 2SJ264 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2063A Low-voltage drive. [2SJ264] Micaless package facilitating easy mounting. 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 : Gate 2.55 2.55 2 : Drain 3 : Source 2.55 2.55 SANYO : TO-2
5.1. 2sj268.pdf Size:100K _sanyo
Ordering number:EN4237 P-Channel Silicon MOSFET 2SJ268 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2093A Low-voltage drive. [2SJ268] Surface mount type device making the following 4.5 10.2 1.3 possible. Reduction in the number of manufacturing pro- cesses for 2SJ268-applied equipment. Hig
5.2. 2sj267.pdf Size:91K _sanyo
Ordering number:EN4747 P-Channel Silicon MOSFET 2SJ267 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2090A Low-voltage drive. [2SJ267] Surface mount type device making the following 10.2 4.5 1.3 possible. Reduction in the assembling time for 2SJ267- applied equipment. High-density surface m
5.3. 2sj265.pdf Size:106K _sanyo
Ordering number:EN4235 P-Channel Silicon MOSFET 2SJ265 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2063A Low-voltage drive. [2SJ265] Micaless package facilitating mounting. 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 : Gate 2.55 2.55 2 : Drain 3 : Source 2.55 2.55 SANYO : TO-220ML
5.4. 2sj263.pdf Size:103K _sanyo
Ordering number:EN4234 P-Channel Silicon MOSFET 2SJ263 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2063A Low-voltage drive. [2SJ263] Micaless package facilitating mounting. 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 : Gate 2.55 2.55 2 : Drain 3 : Source 2.55 2.55 SANYO : TO-220ML
5.5. 2sj266.pdf Size:107K _sanyo
Ordering number:EN4236 P-Channel Silicon MOSFET 2SJ266 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2093A Low-voltage drive. [2SJ266] Surface mount type device making the following 4.5 10.2 1.3 possible. Reduction in the number of manufacturing pro- cesses for 2SJ266-applied equipment. Hig
Datasheet: CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .
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