2SK1908 Todos los transistores

 

2SK1908 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK1908

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 60 W

Tensión drenaje-fuente (Vds): 100 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 15 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 21 nS

Conductancia de drenaje-sustrato (Cd): 200 pF

Resistencia drenaje-fuente RDS(on): 0.135 Ohm

Empaquetado / Estuche: SMP-FD

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2SK1908 Datasheet (PDF)

1.1. 2sk1908.pdf Size:94K _sanyo

2SK1908
2SK1908

Ordering number:EN4650 N-Channel Silicon MOSFET 2SK1908 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2090A Low-voltage drive. [2SK1908] Surface mount type device making the following 10.2 4.5 1.3 possible. Reduction in the number of manufacturing pro- cesses for 2SK1908-applied equipment.

4.1. 2sk1905.pdf Size:92K _sanyo

2SK1908
2SK1908

Ordering number:EN4649 N-Channel Silicon MOSFET 2SK1905 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2063A Low-voltage drive. [2SK1905] Micaless package facilitating easy mounting. 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 : Gate 2.55 2.55 2 : Drain 3 : Source 2.55 2.55 SANYO : TO-

4.2. 2sk1906.pdf Size:95K _sanyo

2SK1908
2SK1908

Ordering number:EN4225 N-Channel Silicon MOSFET 2SK1906 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2063A Low-voltage drive. [2SK1906] Micaless package facilitating mounting. 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 : Gate 2.55 2.55 2 : Drain 3 : Source 2.55 2.55 SANYO : TO-220ML

 4.3. 2sk1900.pdf Size:99K _sanyo

2SK1908
2SK1908

Ordering number:EN4210 N-Channel Silicon MOSFET 2SK1900 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2093A Low-voltage drive. [2SK1900] Surface mount type device making the following 4.5 10.2 1.3 possible. Reduction in the number of manufacturing pro- cesses for 2SK1900-applied equipment.

4.4. 2sk1904.pdf Size:95K _sanyo

2SK1908
2SK1908

Ordering number:EN4211 N-Channel Silicon MOSFET 2SK1904 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2063A Low-voltage drive. [2SK1904] Micaless package facilitating mounting. 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 : Gate 2.55 2.55 2 : Drain 3 : Source 2.55 2.55 SANYO : TO-220ML

 4.5. 2sk1907.pdf Size:96K _sanyo

2SK1908
2SK1908

Ordering number:EN4226 N-Channel Silicon MOSFET 2SK1907 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2093A Low-voltage drive. [2SK1907] Surface mount type device making the following 4.5 10.2 1.3 possible. Reduction in the number of manufacturing pro- cesses for 2SK1907-applied equipment.

4.6. 2sk1909.pdf Size:98K _sanyo

2SK1908
2SK1908

Ordering number:EN4227 N-Channel Silicon MOSFET 2SK1909 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2093A Low-voltage drive. [2SK1909] Surface mount type device making the following 4.5 10.2 1.3 possible. Reduction in the number of manufacturing pro- cesses for 2SK1909-applied equipment.

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