2SK1908 MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK1908
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 60 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 15 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 21 nS
Drain-Source Capacitance (Cd): 200 pF
Maximum Drain-Source On-State Resistance (Rds): 0.135 Ohm
Package: SMP-FD
2SK1908 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK1908 Datasheet (PDF)
1.1. 2sk1908.pdf 
Size:94K _sanyo
Ordering number:EN4650 N-Channel Silicon MOSFET 2SK1908 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2090A Low-voltage drive. [2SK1908] Surface mount type device making the following 10.2 4.5 1.3 possible. Reduction in the number of manufacturing pro- cesses for 2SK1908-applied equipment.
4.1. 2sk1907.pdf Size:96K _sanyo
Ordering number:EN4226 N-Channel Silicon MOSFET 2SK1907 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2093A Low-voltage drive. [2SK1907] Surface mount type device making the following 4.5 10.2 1.3 possible. Reduction in the number of manufacturing pro- cesses for 2SK1907-applied equipment.
4.2. 2sk1904.pdf Size:95K _sanyo
Ordering number:EN4211 N-Channel Silicon MOSFET 2SK1904 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2063A Low-voltage drive. [2SK1904] Micaless package facilitating mounting. 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 : Gate 2.55 2.55 2 : Drain 3 : Source 2.55 2.55 SANYO : TO-220ML
4.3. 2sk1906.pdf Size:95K _sanyo
Ordering number:EN4225 N-Channel Silicon MOSFET 2SK1906 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2063A Low-voltage drive. [2SK1906] Micaless package facilitating mounting. 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 : Gate 2.55 2.55 2 : Drain 3 : Source 2.55 2.55 SANYO : TO-220ML
4.4. 2sk1905.pdf Size:92K _sanyo
Ordering number:EN4649 N-Channel Silicon MOSFET 2SK1905 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2063A Low-voltage drive. [2SK1905] Micaless package facilitating easy mounting. 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 : Gate 2.55 2.55 2 : Drain 3 : Source 2.55 2.55 SANYO : TO-
4.5. 2sk1909.pdf Size:98K _sanyo
Ordering number:EN4227 N-Channel Silicon MOSFET 2SK1909 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2093A Low-voltage drive. [2SK1909] Surface mount type device making the following 4.5 10.2 1.3 possible. Reduction in the number of manufacturing pro- cesses for 2SK1909-applied equipment.
4.6. 2sk1900.pdf Size:99K _sanyo
Ordering number:EN4210 N-Channel Silicon MOSFET 2SK1900 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2093A Low-voltage drive. [2SK1900] Surface mount type device making the following 4.5 10.2 1.3 possible. Reduction in the number of manufacturing pro- cesses for 2SK1900-applied equipment.
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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