2SK1908 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: 2SK1908
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 60 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 15 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 21 ns
Cossⓘ - Выходная емкость: 200 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.135 Ohm
Тип корпуса: SMP-FD
2SK1908 Datasheet (PDF)
2sk1908.pdf
Ordering number:EN4650N-Channel Silicon MOSFET2SK1908Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2090A Low-voltage drive.[2SK1908] Surface mount type device making the following10.24.51.3possible. Reduction in the number of manufacturing pro-cesses for 2SK1908-applied equipm
2sk1900.pdf
Ordering number:EN4210N-Channel Silicon MOSFET2SK1900Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2093A Low-voltage drive.[2SK1900] Surface mount type device making the following4.510.21.3possible. Reduction in the number of manufacturing pro-cesses for 2SK1900-applied equipm
2sk1906.pdf
Ordering number:EN4225N-Channel Silicon MOSFET2SK1906Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2063A Low-voltage drive.[2SK1906] Micaless package facilitating mounting.4.510.02.83.22.41.61.20.70.751 2 3 1 : Gate2.55 2.552 : Drain3 : Source2.55 2.55SANYO : T
2sk1909.pdf
Ordering number:EN4227N-Channel Silicon MOSFET2SK1909Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2093A Low-voltage drive.[2SK1909] Surface mount type device making the following4.510.21.3possible. Reduction in the number of manufacturing pro-cesses for 2SK1909-applied equipm
2sk1905.pdf
Ordering number:EN4649N-Channel Silicon MOSFET2SK1905Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2063A Low-voltage drive.[2SK1905] Micaless package facilitating easy mounting.4.510.02.83.22.41.61.20.70.751 2 3 1 : Gate2.55 2.552 : Drain3 : Source2.55 2.55SANY
2sk1907.pdf
Ordering number:EN4226N-Channel Silicon MOSFET2SK1907Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2093A Low-voltage drive.[2SK1907] Surface mount type device making the following4.510.21.3possible. Reduction in the number of manufacturing pro-cesses for 2SK1907-applied equipm
2sk1904.pdf
Ordering number:EN4211N-Channel Silicon MOSFET2SK1904Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2063A Low-voltage drive.[2SK1904] Micaless package facilitating mounting.4.510.02.83.22.41.61.20.70.751 2 3 1 : Gate2.55 2.552 : Drain3 : Source2.55 2.55SANYO : T
Другие MOSFET... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
Список транзисторов
Обновления
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