2SJ569LS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SJ569LS
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 30 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 300 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(off)|ⓘ - Voltaje de corte de la puerta: 1.5 V
   Qgⓘ - Carga de la puerta: 7 nC
   trⓘ - Tiempo de subida: 37 nS
   Cossⓘ - Capacitancia de salida: 170 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.25 Ohm
   Paquete / Cubierta: TO220FI

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2SJ569LS Datasheet (PDF)

..1. Size:29K sanyo
2sj569ls.pdf

Ordering number : ENN68982SJ569LSP-Channel Silicon MOSFET2SJ569LSUltrahigh-Speed Switching ApplicationsFeaturesPackage Dimensions Low ON-resistance.unit : mm Ultrahigh-speed switching.2078B[2SJ569]4.510.02.83.20.91.20.70.751 : Gate1 2 32 : Drain3 : Source2.55 2.55SANYO : TO-220FI-LSSpecificationsAbsolute Maximum Ratings at Ta=25CPa

9.1. Size:361K toshiba
2sj567.pdf

2SJ567 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (-MOSV) 2SJ567 Industrial Applications Switching Applications Unit: mm Chopper Regulator, DC-DC Converter and Motor Drive Applications Low drain-source ON resistance: RDS (ON) = 1.6 (typ.) High forward transfer admittance: |Y | = 2.0 S (typ.) fs Low leakage current: I = -100 A (max) (V =

9.2. Size:147K sanyo
2sj562.pdf

Ordering number:ENN6096AP-Channel Silicon MOSFET2SJ562Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance.unit:mm Ultrahigh-speed switching.2062A 2.5V drive.[2SJ562]4.51.51.60.4 0.53 2 10.41.53.01 : Gate0.752 : Drain3 : SourceSANYO : PCP(Bottom view)SpecificationsAbsolute Maximum Ratings at Ta = 25C

9.3. Size:140K sanyo
2sj563.pdf

Ordering number:ENN6097AP-Channel Silicon MOSFET2SJ563Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance.unit:mm Ultrahigh-speed switching.2062A 4V drive.[2SJ563]4.51.51.60.4 0.53 2 10.41.53.01 : Gate0.752 : Drain3 : SourceSANYO : PCP(Bottom view)SpecificationsAbsolute Maximum Ratings at Ta = 25CPa

9.4. Size:184K sanyo
2sj560.pdf

Ordering number:ENN6120AP-Channel Silicon MOSFET2SJ560Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance.unit:mm Ultrahigh-speed switching.2157 2.5V drive.[2SJ560]4.51.51.60.4 0.53 2 10.41.53.01 : Gate2 : Drain0.753 : SourceSANYO : PCP(Bottom view)SpecificationsAbsolute Maximum Ratings at Ta = 25CP

9.5. Size:159K sanyo
2sj561.pdf

Ordering number:ENN6095AP-Channel Silicon MOSFET2SJ561Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance.unit:mm Ultrahigh-speed switching.2062A 4V drive.[2SJ561]4.51.51.60.4 0.53 2 10.41.53.01 : Gate0.752 : Drain3 : SourceSANYO : PCP(Bottom view)SpecificationsAbsolute Maximum Ratings at Ta = 25CPa

9.6. Size:833K cn vbsemi
2sj562.pdf

2SJ562www.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.050 at VGS = - 10 V - 7.6 TrenchFET Power MOSFET- 30 13 nC 100 % Rg Tested0.056 at VGS = - 4.5 V - 6.0APPLICATIONS Load Switch Battery SwitchDS G G D SD P-Channel MOSFET ABSOL

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