2SJ569LS Datasheet. Equivalente

 ..1. Size:29K  sanyo
 2sj569ls.pdf

Ordering number ENN6898 2SJ569LS P-Channel Silicon MOSFET 2SJ569LS Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2078B [2SJ569] 4.5 10.0 2.8 3.2 0.9 1.2 0.7 0.75 1 Gate 1 2 3 2 Drain 3 Source 2.55 2.55 SANYO TO-220FI-LS Specifications Absolute Maximum Ratings at Ta=25 C Pa

 9.1. Size:361K  toshiba
 2sj567.pdf

2SJ567 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type ( -MOSV) 2SJ567 Industrial Applications Switching Applications Unit mm Chopper Regulator, DC-DC Converter and Motor Drive Applications Low drain-source ON resistance RDS (ON) = 1.6 (typ.) High forward transfer admittance Y = 2.0 S (typ.) fs Low leakage current I = -100 A (max) (V =

 9.2. Size:147K  sanyo
 2sj562.pdf

Ordering number ENN6096A P-Channel Silicon MOSFET 2SJ562 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2062A 2.5V drive. [2SJ562] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 1 Gate 0.75 2 Drain 3 Source SANYO PCP (Bottom view) Specifications Absolute Maximum Ratings at Ta = 25 C

 9.3. Size:140K  sanyo
 2sj563.pdf

Ordering number ENN6097A P-Channel Silicon MOSFET 2SJ563 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2062A 4V drive. [2SJ563] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 1 Gate 0.75 2 Drain 3 Source SANYO PCP (Bottom view) Specifications Absolute Maximum Ratings at Ta = 25 C Pa

 9.4. Size:184K  sanyo
 2sj560.pdf

Ordering number ENN6120A P-Channel Silicon MOSFET 2SJ560 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2157 2.5V drive. [2SJ560] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 1 Gate 2 Drain 0.75 3 Source SANYO PCP (Bottom view) Specifications Absolute Maximum Ratings at Ta = 25 C P

 9.5. Size:159K  sanyo
 2sj561.pdf

Ordering number ENN6095A P-Channel Silicon MOSFET 2SJ561 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2062A 4V drive. [2SJ561] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 1 Gate 0.75 2 Drain 3 Source SANYO PCP (Bottom view) Specifications Absolute Maximum Ratings at Ta = 25 C Pa

 9.6. Size:833K  cn vbsemi
 2sj562.pdf

2SJ562 www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.050 at VGS = - 10 V - 7.6 TrenchFET Power MOSFET - 30 13 nC 100 % Rg Tested 0.056 at VGS = - 4.5 V - 6.0 APPLICATIONS Load Switch Battery Switch D S G G D S D P-Channel MOSFET ABSOL