2SJ569LS
MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SJ569LS
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 30
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 300
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 1.5
V
|Id|ⓘ - Maximum Drain Current: 5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 7
nC
trⓘ - Rise Time: 37
nS
Cossⓘ -
Output Capacitance: 170
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.25
Ohm
Package:
TO220FI
2SJ569LS
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SJ569LS
Datasheet (PDF)
..1. Size:29K sanyo
2sj569ls.pdf 
Ordering number : ENN68982SJ569LSP-Channel Silicon MOSFET2SJ569LSUltrahigh-Speed Switching ApplicationsFeaturesPackage Dimensions Low ON-resistance.unit : mm Ultrahigh-speed switching.2078B[2SJ569]4.510.02.83.20.91.20.70.751 : Gate1 2 32 : Drain3 : Source2.55 2.55SANYO : TO-220FI-LSSpecificationsAbsolute Maximum Ratings at Ta=25CPa
9.1. Size:361K toshiba
2sj567.pdf
2SJ567 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (-MOSV) 2SJ567 Industrial Applications Switching Applications Unit: mm Chopper Regulator, DC-DC Converter and Motor Drive Applications Low drain-source ON resistance: RDS (ON) = 1.6 (typ.) High forward transfer admittance: |Y | = 2.0 S (typ.) fs Low leakage current: I = -100 A (max) (V =
9.2. Size:147K sanyo
2sj562.pdf
Ordering number:ENN6096AP-Channel Silicon MOSFET2SJ562Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance.unit:mm Ultrahigh-speed switching.2062A 2.5V drive.[2SJ562]4.51.51.60.4 0.53 2 10.41.53.01 : Gate0.752 : Drain3 : SourceSANYO : PCP(Bottom view)SpecificationsAbsolute Maximum Ratings at Ta = 25C
9.3. Size:140K sanyo
2sj563.pdf
Ordering number:ENN6097AP-Channel Silicon MOSFET2SJ563Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance.unit:mm Ultrahigh-speed switching.2062A 4V drive.[2SJ563]4.51.51.60.4 0.53 2 10.41.53.01 : Gate0.752 : Drain3 : SourceSANYO : PCP(Bottom view)SpecificationsAbsolute Maximum Ratings at Ta = 25CPa
9.4. Size:184K sanyo
2sj560.pdf
Ordering number:ENN6120AP-Channel Silicon MOSFET2SJ560Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance.unit:mm Ultrahigh-speed switching.2157 2.5V drive.[2SJ560]4.51.51.60.4 0.53 2 10.41.53.01 : Gate2 : Drain0.753 : SourceSANYO : PCP(Bottom view)SpecificationsAbsolute Maximum Ratings at Ta = 25CP
9.5. Size:159K sanyo
2sj561.pdf
Ordering number:ENN6095AP-Channel Silicon MOSFET2SJ561Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance.unit:mm Ultrahigh-speed switching.2062A 4V drive.[2SJ561]4.51.51.60.4 0.53 2 10.41.53.01 : Gate0.752 : Drain3 : SourceSANYO : PCP(Bottom view)SpecificationsAbsolute Maximum Ratings at Ta = 25CPa
9.6. Size:833K cn vbsemi
2sj562.pdf
2SJ562www.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.050 at VGS = - 10 V - 7.6 TrenchFET Power MOSFET- 30 13 nC 100 % Rg Tested0.056 at VGS = - 4.5 V - 6.0APPLICATIONS Load Switch Battery SwitchDS G G D SD P-Channel MOSFET ABSOL
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