SSF1007 Todos los transistores

 

SSF1007 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SSF1007

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 258 W

Tensión drenaje-fuente (Vds): 100 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 130 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 243 nC

Tiempo de elevación (tr): 108 nS

Conductancia de drenaje-sustrato (Cd): 454 pF

Resistencia drenaje-fuente RDS(on): 0.007 Ohm

Empaquetado / Estuche: TO220

Búsqueda de reemplazo de MOSFET SSF1007

 

SSF1007 Datasheet (PDF)

1.1. ssf1007.pdf Size:410K _silikron

SSF1007
SSF1007

 SSF1007  Main Product Characteristics: VDSS 100V RDS(on) 5.8mohm (Typ) ID 130A Features and Benefits: SSF1007 TOP View (TO220) Advanced trench MOSFET process technology Special designed for convertors and power controls Ultra low on-resistance 175℃ operating temperature High Avalanche capability and 100% tested Description: It utilizes the latest trench

4.1. ssf1009.pdf Size:659K _silikron

SSF1007
SSF1007

 SSF1009 Main Product Characteristics: VDSS 100V RDS(on) 7.2mohm(typ.) ID 100A Ma r k ing an d pin Sche ma ti c di agr a m TO220 Assignment Features and Benefits:  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body rec

4.2. ssf1006.pdf Size:672K _silikron

SSF1007
SSF1007

 SSF1006 Main Product Characteristics: VDSS 100V RDS(on) 4.6mΩ (typ.) ID 200A ① Mar ki ng a nd p in Sche ma ti c di agr a m TO220 Assignment Features and Benefits:  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body

 4.3. ssf1006a.pdf Size:921K _silikron

SSF1007
SSF1007

SSF1006A Feathers: ID =200A Advanced trench process technology BV=100V avalanche energy, 100% test Rdson=4.7mΩ (Typ.) Fully characterized avalanche voltage and current Description: The SSF1006A is a new generation of high voltage and low current N–Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electri

4.4. ssf1006h.pdf Size:464K _silikron

SSF1007
SSF1007

 SSF1006H Main Product Characteristics: VDSS 100V RDS(on) 5mΩ (typ.) ID 200A ① Marking a nd p in TO-247 Schematic diagram Assignment Features and Benefits:  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
Back to Top

 


SSF1007
  SSF1007
  SSF1007
  SSF1007
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: SW1N55D | SKI10297 | SKI10195 | SKI10123 | SKI07171 | SKI07114 | SKI07074 | SKI06106 | SKI06073 | SKI06048 | SKI04044 | SKI04033 | SKI04024 | SKI03087 | SKI03063 |

 

 

 
Back to Top