SSF1007 Todos los transistores

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 ssf1007.pdf

SSF1007 Main Product Characteristics VDSS 100V RDS(on) 5.8mohm Typ ID 130A Features and Benefits SSF1007 TOP View (TO220) Advanced trench MOSFET process technology Special designed for convertors and power controls Ultra low on-resistance 175 operating temperature High Avalanche capability and 100% tested Description It utilizes the latest trench

 8.1. Size:659K  silikron
 ssf1009.pdf

SSF1009 Main Product Characteristics VDSS 100V RDS(on) 7.2mohm(typ.) ID 100A Ma r k ing an d pin Sche ma ti c di agr a m TO220 Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body rec

 8.2. Size:672K  silikron
 ssf1006.pdf

SSF1006 Main Product Characteristics VDSS 100V RDS(on) 4.6m (typ.) ID 200A Mar ki ng a nd p in Sche ma ti c di agr a m TO220 Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body

 8.3. Size:921K  silikron
 ssf1006a.pdf

SSF1006A Feathers ID =200A Advanced trench process technology BV=100V avalanche energy, 100% test Rdson=4.7m Typ. Fully characterized avalanche voltage and current Description The SSF1006A is a new generation of high voltage and low current N Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electri

 8.4. Size:464K  silikron
 ssf1006h.pdf

SSF1006H Main Product Characteristics VDSS 100V RDS(on) 5m (typ.) ID 200A Marking a nd p in TO-247 Schematic diagram Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery