SSF1007 Todos los transistores

 

SSF1007 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SSF1007
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 258 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 130 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 108 nS
   Cossⓘ - Capacitancia de salida: 454 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.007 Ohm
   Paquete / Cubierta: TO220
 

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SSF1007 datasheet

 ..1. Size:410K  silikron
ssf1007.pdf pdf_icon

SSF1007

SSF1007 Main Product Characteristics VDSS 100V RDS(on) 5.8mohm Typ ID 130A Features and Benefits SSF1007 TOP View (TO220) Advanced trench MOSFET process technology Special designed for convertors and power controls Ultra low on-resistance 175 operating temperature High Avalanche capability and 100% tested Description It utilizes the latest trench

 8.1. Size:659K  silikron
ssf1009.pdf pdf_icon

SSF1007

SSF1009 Main Product Characteristics VDSS 100V RDS(on) 7.2mohm(typ.) ID 100A Ma r k ing an d pin Sche ma ti c di agr a m TO220 Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body rec

 8.2. Size:672K  silikron
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SSF1007

SSF1006 Main Product Characteristics VDSS 100V RDS(on) 4.6m (typ.) ID 200A Mar ki ng a nd p in Sche ma ti c di agr a m TO220 Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body

 8.3. Size:921K  silikron
ssf1006a.pdf pdf_icon

SSF1007

SSF1006A Feathers ID =200A Advanced trench process technology BV=100V avalanche energy, 100% test Rdson=4.7m Typ. Fully characterized avalanche voltage and current Description The SSF1006A is a new generation of high voltage and low current N Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electri

Otros transistores... 2SJ585LS , 2SJ589LS , 2N7002KB , 2N7002KG8 , SSF0115 , SSF1006 , SSF1006A , SSF1006H , TK10A60D , SSF1009 , SSF1010 , SSF1010A , SSF1016 , SSF1016A , SSF1016D , SSF1020 , SSF1020A .

 

 
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