SSF1007 Specs and Replacement

Type Designator: SSF1007

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 258 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 130 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 108 nS

Cossⓘ - Output Capacitance: 454 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm

Package: TO220

SSF1007 substitution

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SSF1007 datasheet

 ..1. Size:410K  silikron
 ssf1007.pdf pdf_icon

SSF1007

SSF1007 Main Product Characteristics VDSS 100V RDS(on) 5.8mohm Typ ID 130A Features and Benefits SSF1007 TOP View (TO220) Advanced trench MOSFET process technology Special designed for convertors and power controls Ultra low on-resistance 175 operating temperature High Avalanche capability and 100% tested Description It utilizes the latest trench... See More ⇒

 8.1. Size:659K  silikron
 ssf1009.pdf pdf_icon

SSF1007

SSF1009 Main Product Characteristics VDSS 100V RDS(on) 7.2mohm(typ.) ID 100A Ma r k ing an d pin Sche ma ti c di agr a m TO220 Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body rec... See More ⇒

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SSF1007

SSF1006 Main Product Characteristics VDSS 100V RDS(on) 4.6m (typ.) ID 200A Mar ki ng a nd p in Sche ma ti c di agr a m TO220 Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body... See More ⇒

 8.3. Size:921K  silikron
 ssf1006a.pdf pdf_icon

SSF1007

SSF1006A Feathers ID =200A Advanced trench process technology BV=100V avalanche energy, 100% test Rdson=4.7m Typ. Fully characterized avalanche voltage and current Description The SSF1006A is a new generation of high voltage and low current N Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electri... See More ⇒

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Detailed specifications: 2SJ585LS, 2SJ589LS, 2N7002KB, 2N7002KG8, SSF0115, SSF1006, SSF1006A, SSF1006H, TK10A60D, SSF1009, SSF1010, SSF1010A, SSF1016, SSF1016A, SSF1016D, SSF1020, SSF1020A

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.