SSF1007 MOSFET. Datasheet pdf. Equivalent
Type Designator: SSF1007
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 258 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 130 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 243 nC
trⓘ - Rise Time: 108 nS
Cossⓘ - Output Capacitance: 454 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
Package: TO220
SSF1007 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SSF1007 Datasheet (PDF)
ssf1007.pdf
SSF1007Main Product Characteristics: VDSS 100V RDS(on) 5.8mohmTypID 130A Features and Benefits: SSF1007 TOP View (TO220) Advanced trench MOSFET process technology Special designed for convertors and power controls Ultra low on-resistance 175 operating temperature High Avalanche capability and 100% tested Description: It utilizes the latest trench
ssf1009.pdf
SSF1009 Main Product Characteristics: VDSS 100V RDS(on) 7.2mohm(typ.) ID 100A Ma r k ing an d pin Sche ma ti c di agr a m TO220 Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body rec
ssf1006.pdf
SSF1006 Main Product Characteristics: VDSS 100V RDS(on) 4.6m (typ.) ID 200A Mar ki ng a nd p in Sche ma ti c di agr a m TO220 Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body
ssf1006a.pdf
SSF1006A Feathers: ID =200A Advanced trench process technology BV=100V avalanche energy, 100% test Rdson=4.7m Typ. Fully characterized avalanche voltage and current Description: The SSF1006A is a new generation of high voltage and low current NChannel enhancement mode trench power MOSFET. This new technology increases the device reliability and electri
ssf1006h.pdf
SSF1006H Main Product Characteristics: VDSS 100V RDS(on) 5m (typ.) ID 200A Marking a nd p in TO-247 Schematic diagram Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: FDG315N
History: FDG315N
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