SSF10N60F MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SSF10N60F
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 156 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 10 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 36.4 nS
Cossⓘ - Capacitancia de salida: 137 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.8 Ohm
Paquete / Cubierta: TO220F
Búsqueda de reemplazo de SSF10N60F MOSFET
SSF10N60F Datasheet (PDF)
ssf10n60f.pdf

SSF10N60F Main Product Characteristics: VDSS 600V RDS(on) 0.69ohm(typ.) ID 10A Marking and p in TO220F Schematic diagram Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery
ssf10n60a.pdf

SSF10N60AAdvanced Power MOSFETFEATURESBVDSS = 600 V Avalanche Rugged TechnologyRDS(on) = 0.8 Rugged Gate Oxide Technology Lower Input CapacitanceID = 6.9 A Improved Gate Charge Extended Safe Operating AreaTO-3PF Lower Leakage Current : 25 A (Max.) @ VDS = 600V Low RDS(ON) : 0.646 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol
ssf10n60.pdf

SSF10N60 Main Product Characteristics: VDSS 600V RDS(on) 0.69 (typ.) ID 10A Marking a nd p in Schematic diagram TO-220 Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery
ssf10n65.pdf

SSF10N65 Main Product Characteristics: VDSS 650V RDS(on) 0.9 (typ.) ID 10A Marking a nd p in Schematic diagram TO-220 Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery
Otros transistores... SSF1020D , SSF1030 , SSF1030B , SSF1030D , SSF1090 , SSF1090A , SSF1090D , SSF10N60 , AON6380 , SSF10N65 , SSF10N90F1 , SSF1109 , SSF1116 , SSF1116A , SSF1122 , SSF1122D , SSF11NS60 .
History: JFPC13N65CI | SRT06N022HD | NTUD3174NZ | IRF7101PBF | HY1808APS | IPP05CN10NG | SIX3439K
History: JFPC13N65CI | SRT06N022HD | NTUD3174NZ | IRF7101PBF | HY1808APS | IPP05CN10NG | SIX3439K



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