SSF10N60F MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SSF10N60F
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 156 W
Tensión drenaje-fuente (Vds): 600 V
Tensión compuerta-fuente (Vgs): 30 V
Corriente continua de drenaje (Id): 10 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tiempo de elevación (tr): 36.4 nS
Conductancia de drenaje-sustrato (Cd): 137 pF
Resistencia drenaje-fuente RDS(on): 0.8 Ohm
Empaquetado / Estuche: TO220F
Búsqueda de reemplazo de MOSFET SSF10N60F
SSF10N60F Datasheet (PDF)
1.1. ssf10n60f.pdf 
Size:528K _silikron
SSF10N60F Main Product Characteristics: VDSS 600V RDS(on) 0.69ohm(typ.) ID 10A Marking and p in TO220F Schematic diagram Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery
2.1. ssf10n60a.pdf Size:255K _fairchild_semi
SSF10N60A Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS(on) = 0.8 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 6.9 A Improved Gate Charge Extended Safe Operating Area TO-3PF µ Lower Leakage Current : 25 A (Max.) @ VDS = 600V Low RDS(ON) : 0.646 (Typ.) Ω 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol
2.2. ssf10n60.pdf Size:531K _silikron
SSF10N60 Main Product Characteristics: VDSS 600V RDS(on) 0.69Ω (typ.) ID 10A Marking a nd p in Schematic diagram TO-220 Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery
Otros transistores... CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .
