Справочник MOSFET. SSF10N60F

 

SSF10N60F Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: SSF10N60F
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 156 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 10 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 36.4 ns
   Cossⓘ - Выходная емкость: 137 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.8 Ohm
   Тип корпуса: TO220F
 

 Аналог (замена) для SSF10N60F

   - подбор ⓘ MOSFET транзистора по параметрам

 

SSF10N60F Datasheet (PDF)

 ..1. Size:528K  silikron
ssf10n60f.pdfpdf_icon

SSF10N60F

SSF10N60F Main Product Characteristics: VDSS 600V RDS(on) 0.69ohm(typ.) ID 10A Marking and p in TO220F Schematic diagram Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

 6.1. Size:255K  fairchild semi
ssf10n60a.pdfpdf_icon

SSF10N60F

SSF10N60AAdvanced Power MOSFETFEATURESBVDSS = 600 V Avalanche Rugged TechnologyRDS(on) = 0.8 Rugged Gate Oxide Technology Lower Input CapacitanceID = 6.9 A Improved Gate Charge Extended Safe Operating AreaTO-3PF Lower Leakage Current : 25 A (Max.) @ VDS = 600V Low RDS(ON) : 0.646 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol

 6.2. Size:531K  silikron
ssf10n60.pdfpdf_icon

SSF10N60F

SSF10N60 Main Product Characteristics: VDSS 600V RDS(on) 0.69 (typ.) ID 10A Marking a nd p in Schematic diagram TO-220 Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

 7.1. Size:532K  silikron
ssf10n65.pdfpdf_icon

SSF10N60F

SSF10N65 Main Product Characteristics: VDSS 650V RDS(on) 0.9 (typ.) ID 10A Marking a nd p in Schematic diagram TO-220 Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

Другие MOSFET... SSF1020D , SSF1030 , SSF1030B , SSF1030D , SSF1090 , SSF1090A , SSF1090D , SSF10N60 , AON6380 , SSF10N65 , SSF10N90F1 , SSF1109 , SSF1116 , SSF1116A , SSF1122 , SSF1122D , SSF11NS60 .

History: SQP120N10-3M8 | IPS60R1K0PFD7S

 

 
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