SSF10N60F Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: SSF10N60F
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 156 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 10 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 36.4 ns
Cossⓘ - Выходная емкость: 137 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.8 Ohm
Тип корпуса: TO220F
Аналог (замена) для SSF10N60F
SSF10N60F Datasheet (PDF)
ssf10n60f.pdf

SSF10N60F Main Product Characteristics: VDSS 600V RDS(on) 0.69ohm(typ.) ID 10A Marking and p in TO220F Schematic diagram Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery
ssf10n60a.pdf

SSF10N60AAdvanced Power MOSFETFEATURESBVDSS = 600 V Avalanche Rugged TechnologyRDS(on) = 0.8 Rugged Gate Oxide Technology Lower Input CapacitanceID = 6.9 A Improved Gate Charge Extended Safe Operating AreaTO-3PF Lower Leakage Current : 25 A (Max.) @ VDS = 600V Low RDS(ON) : 0.646 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol
ssf10n60.pdf

SSF10N60 Main Product Characteristics: VDSS 600V RDS(on) 0.69 (typ.) ID 10A Marking a nd p in Schematic diagram TO-220 Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery
ssf10n65.pdf

SSF10N65 Main Product Characteristics: VDSS 650V RDS(on) 0.9 (typ.) ID 10A Marking a nd p in Schematic diagram TO-220 Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery
Другие MOSFET... SSF1020D , SSF1030 , SSF1030B , SSF1030D , SSF1090 , SSF1090A , SSF1090D , SSF10N60 , AON6380 , SSF10N65 , SSF10N90F1 , SSF1109 , SSF1116 , SSF1116A , SSF1122 , SSF1122D , SSF11NS60 .
History: SRC65R230BS | SM1A20NSU | FDMA86551L | FDB86360-F085 | IRF6614PBF | APT17N80BC3 | IRF7202
History: SRC65R230BS | SM1A20NSU | FDMA86551L | FDB86360-F085 | IRF6614PBF | APT17N80BC3 | IRF7202



Список транзисторов
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