SSF10N60F Specs and Replacement

Type Designator: SSF10N60F

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 156 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 36.4 nS

Cossⓘ - Output Capacitance: 137 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm

Package: TO220F

SSF10N60F substitution

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SSF10N60F datasheet

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SSF10N60F

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 6.1. Size:255K  fairchild semi
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SSF10N60F

SSF10N60A Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS(on) = 0.8 Rugged Gate Oxide Technology Lower Input Capacitance ID = 6.9 A Improved Gate Charge Extended Safe Operating Area TO-3PF Lower Leakage Current 25 A (Max.) @ VDS = 600V Low RDS(ON) 0.646 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol... See More ⇒

 6.2. Size:531K  silikron
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SSF10N60F

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SSF10N60F

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Detailed specifications: SSF1020D, SSF1030, SSF1030B, SSF1030D, SSF1090, SSF1090A, SSF1090D, SSF10N60, IRFZ24N, SSF10N65, SSF10N90F1, SSF1109, SSF1116, SSF1116A, SSF1122, SSF1122D, SSF11NS60

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs