2N7057 Todos los transistores

 

2N7057 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N7057

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 150 W

Tensión drenaje-fuente |Vds|: 400 V

Tensión compuerta-fuente |Vgs|: 40 V

Corriente continua de drenaje |Id|: 13 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.4 Ohm

Empaquetado / Estuche: TO218

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2N7057 Datasheet (PDF)

9.1. 2n705.pdf Size:276K _rca

2N7057

9.2. 2n7052 nzt7053 2n7053.pdf Size:314K _fairchild_semi

2N7057
2N7057

Discrete POWER & SignalTechnologies2N7052 2N7053 NZT7053CECC TO-92BBTO-226CESOT-223BENPN Darlington TransistorThis device is designed for applications requiring extremely highgain at collector currents to 1.0 A and high breakdown voltage.Sourced from Process 06.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO C

 9.3. 2n7051.pdf Size:27K _fairchild_semi

2N7057
2N7057

2N7051NPN Darlington Transistor This device designed for applications requiring extremely high gain at collector currents to 1.0A and high breakdown voltage. Sourced from Process 06. See 2N7052 for Characteristics.TO-9211. Emitter 2. Collector 3. BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings* TA=25C unless otherwise noted Symbol Parameter Ratings

9.4. 2n7054.pdf Size:259K _inchange_semiconductor

2N7057
2N7057

isc N-Channel MOSFET Transistor 2N7054FEATURESDrain Current I =43A@ T =25D CDrain Source Voltage-: V =100V(Min)DSSStatic Drain-Source On-Resistance: R = 0.04(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

 9.5. 2n7058.pdf Size:303K _inchange_semiconductor

2N7057
2N7057

isc N-Channel MOSFET Transistor 2N7058FEATURESDrain Current I = 14A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.4(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

9.6. 2n7055.pdf Size:194K _inchange_semiconductor

2N7057
2N7057

isc N-Channel MOSFET Transistor 2N7055FEATURESDrain Current: I = 33A@ T =25D CDrain Source Voltage-: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 85m(Max)DS(on)Fast SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh efficiency switch mode power suppliesActive power factor corre

Otros transistores... 2N7008 , 2N7012 , 2N7013 , 2N7014 , 2N7016 , 2N7022 , 2N7054 , 2N7055 , IRF150 , 2N7058 , 2N7060 , 2N7061 , 2N7063 , 2N7064 , 2N7066 , 2N7071 , 2N7072 .

 

 
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