2N7057 MOSFET. Datasheet pdf. Equivalent
Type Designator: 2N7057
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 150 W
Maximum Drain-Source Voltage |Vds|: 400 V
Maximum Gate-Source Voltage |Vgs|: 40 V
Maximum Drain Current |Id|: 13 A
Maximum Junction Temperature (Tj): 150 °C
Drain-Source Capacitance (Cd): 3300 pF
Maximum Drain-Source On-State Resistance (Rds): 0.4 Ohm
Package: TO218
2N7057 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2N7057 Datasheet (PDF)
5.1. 2n705.pdf 
Size:276K _rca
5.2. 2n7052 nzt7053 2n7053.pdf Size:314K _fairchild_semi
Discrete POWER & Signal Technologies 2N7052 2N7053 NZT7053 C E C C TO-92 B B TO-226 C E SOT-223 B E NPN Darlington Transistor This device is designed for applications requiring extremely high gain at collector currents to 1.0 A and high breakdown voltage. Sourced from Process 06. Absolute Maximum Ratings* TA = 25C unless otherwise noted Symbol Parameter Value Units VCEO Colle
5.3. 2n7051.pdf Size:27K _fairchild_semi
2N7051 NPN Darlington Transistor This device designed for applications requiring extremely high gain at collector currents to 1.0A and high breakdown voltage. Sourced from Process 06. See 2N7052 for Characteristics. TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings* TA=25C unless otherwise noted Symbol Parameter Ratings Units VCE
Datasheet: 2N7008 , 2N7012 , 2N7013 , 2N7014 , 2N7016 , 2N7022 , 2N7054 , 2N7055 , IRF150 , 2N7058 , 2N7060 , 2N7061 , 2N7063 , 2N7064 , 2N7066 , 2N7071 , 2N7072 .
