2N7057 MOSFET. Datasheet pdf. Equivalent
Type Designator: 2N7057
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 150 W
Maximum Drain-Source Voltage |Vds|: 400 V
Maximum Gate-Source Voltage |Vgs|: 40 V
Maximum Drain Current |Id|: 13 A
Maximum Junction Temperature (Tj): 150 °C
Drain-Source Capacitance (Cd): 3300 pF
Maximum Drain-Source On-State Resistance (Rds): 0.4 Ohm
Package: TO218
2N7057 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2N7057 Datasheet (PDF)
5.1. 2n705.pdf 
Size:276K _rca
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5.2. 2n7052_nzt7053_2n7053.pdf Size:314K _fairchild_semi
Discrete POWER & Signal Technologies 2N7052 2N7053 NZT7053 C E C C TO-92 B B TO-226 C E SOT-223 B E NPN Darlington Transistor This device is designed for applications requiring extremely high gain at collector currents to 1.0 A and high breakdown voltage. Sourced from Process 06. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units VCEO Colle
5.3. 2n7051.pdf Size:27K _fairchild_semi
2N7051 NPN Darlington Transistor • This device designed for applications requiring extremely high gain at collector currents to 1.0A and high breakdown voltage. • Sourced from Process 06. • See 2N7052 for Characteristics. TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings* TA=25°C unless otherwise noted Symbol Parameter Ratings Units VCE
Datasheet: 2N7008 , 2N7012 , 2N7013 , 2N7014 , 2N7016 , 2N7022 , 2N7054 , 2N7055 , IRF150 , 2N7058 , 2N7060 , 2N7061 , 2N7063 , 2N7064 , 2N7066 , 2N7071 , 2N7072 .
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