SSF1N80D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SSF1N80D

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 44 W

Tensión drenaje-fuente (Vds): 800 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 29 nS

Conductancia de drenaje-sustrato (Cd): 15 pF

Resistencia drenaje-fuente RDS(on): 16 Ohm

Empaquetado / Estuche: TO252

Búsqueda de reemplazo de MOSFET SSF1N80D

SSF1N80D Datasheet (PDF)

1.1. ssf1n80d.pdf Size:400K _silikron

SSF1N80D Main Product Characteristics: VDSS 800V RDS(on) 13Ω (typ.) ID 1A Marking and pin TO-252 Schematic diagram Assignment Features and Benefits:  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery �

3.1. ssf1n80g5.pdf Size:360K _silikron

SSF1N80G5 Main Product Characteristics: VDSS 800V RDS(on) 13Ω (typ.) ID 1A Marking and pin SOT223 Schematic diagram Assignment Features and Benefits:  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery �

5.1. ssf1n90d.pdf Size:401K _silikron

SSF1N90D Main Product Characteristics: VDSS 900V RDS(on) 15Ω (typ.) ID 1A Marking and pin TO-252 Schematic diagram Assignment Features and Benefits:  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery �

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

Liste

Recientemente añadidas las descripciónes de los transistores: