SSF1N80D Datasheet and Replacement
Type Designator: SSF1N80D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 44 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 29 nS
Cossⓘ - Output Capacitance: 15 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 16 Ohm
Package: TO252
SSF1N80D substitution
SSF1N80D Datasheet (PDF)
ssf1n80d.pdf

SSF1N80DMain Product Characteristics: VDSS 800V RDS(on) 13 (typ.) ID 1A Marking and pin TO-252Schematic diagramAssignmentFeatures and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery
ssf1n80g5.pdf

SSF1N80G5Main Product Characteristics: VDSS 800V RDS(on) 13 (typ.) ID 1AMarking and pin SOT223Schematic diagramAssignmentFeatures and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery
ssf1n90d.pdf

SSF1N90DMain Product Characteristics: VDSS 900V RDS(on) 15 (typ.) ID 1A Marking and pin TO-252Schematic diagramAssignmentFeatures and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery
Datasheet: SSF1502D , SSF1502G5 , SSF1504D , SSF1526 , SSF1530 , SSF18N50F , SSF18NS60 , SSF18NS60F , IRF540 , SSF1N80G5 , SSF1N90D , SSF20N50UH , SSF20N60H , SSF20NS60 , SSF20NS60F , SSF20NS65 , SSF20NS65F .
History: EKI04027 | BLP04N10-P | SM140R50CT1TL | AP60SL650AFI | NVMFS5C410N | MP88N25C | DHB16N06
Keywords - SSF1N80D MOSFET datasheet
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History: EKI04027 | BLP04N10-P | SM140R50CT1TL | AP60SL650AFI | NVMFS5C410N | MP88N25C | DHB16N06



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