SSF2112H2 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SSF2112H2

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.25 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 10 V

|Id|ⓘ - Corriente continua de drenaje: 8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 4.8 nS

Cossⓘ - Capacitancia de salida: 229 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0125 Ohm

Encapsulados: TSSOP8

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SSF2112H2 datasheet

 ..1. Size:634K  silikron
 ssf2112h2.pdf pdf_icon

SSF2112H2

SSF2112H2 Main Product Characteristics D1 D2 VDSS 20V D1 D2 S1 S2 G1 G2 2112H2 8205A S1 S2 G1 G2 RDS(on) 10mohm(typ.) S1 S2 ID 8A Marking and pin Schematic diagram TSSOP-8 Assignment Features and Benefits Advanced trench MOSFET process technology Special designed for buttery protection, load switching and general power management Ultra low on-re

 8.1. Size:347K  silikron
 ssf2116ej3.pdf pdf_icon

SSF2112H2

SSF2116EJ3 Main Product Characteristics VDSS 20V RDS(on) 14.5mohm typ. ID 8.5A DFN2X5-6L-EP Marking and pin Schematic diagram Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recov

 9.1. Size:280K  silikron
 ssf2145ch6.pdf pdf_icon

SSF2112H2

SSF2145CH6 Main Product Characteristics n-ch p-ch VDSS 20V -20V RDSon(typ.) 38mohm 64mohm Marking and pin TSOP-6 Schematic diagram ID 4.8A 2.9A Assignment Features and Benefits Advanced trench MOSFET process technology Special designed for load switching and buttery protection applications 150 operating temperature Description It utilizes the l

 9.2. Size:545K  silikron
 ssf2129h3.pdf pdf_icon

SSF2112H2

SSF2129H3 Main Product Characteristics VDSS -20V D1 D2 G1 G2 RDS(on) 21m (typ.) S1 S2 ID -6.0A Marking and pin SOP-8 S che matic diagram Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and re

MOSTRAR MÁS

Otros transistores... SSF1N80G5, SSF1N90D, SSF20N50UH, SSF20N60H, SSF20NS60, SSF20NS60F, SSF20NS65, SSF20NS65F, IRF640N, SSF2116EJ3, SSF2122E, SSF2129H3, SSF2145CH6, SSF2160G4, SSF2300, SSF2300A, SSF2300B