Справочник MOSFET. SSF2112H2

 

SSF2112H2 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SSF2112H2
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 1.25 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 10 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 1.2 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 8 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 19 nC
   trⓘ - Время нарастания: 4.8 ns
   Cossⓘ - Выходная емкость: 229 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0125 Ohm
   Тип корпуса: TSSOP8

 Аналог (замена) для SSF2112H2

 

 

SSF2112H2 Datasheet (PDF)

 ..1. Size:634K  silikron
 ssf2112h2.pdf

SSF2112H2 SSF2112H2

SSF2112H2Main Product Characteristics: D1D2VDSS 20V D1 D2S1 S2G1 G22112H28205AS1 S2G1 G2 RDS(on) 10mohm(typ.)S1 S2ID 8A Marking and pin Schematic diagramTSSOP-8AssignmentFeatures and Benefits: Advanced trench MOSFET process technology Special designed for buttery protection, load switching and general power management Ultra low on-re

 8.1. Size:347K  silikron
 ssf2116ej3.pdf

SSF2112H2 SSF2112H2

SSF2116EJ3 Main Product Characteristics: VDSS 20V RDS(on) 14.5mohmtyp.ID 8.5A DFN2X5-6L-EP Marking and pin Schematic diagram Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recov

 9.1. Size:280K  silikron
 ssf2145ch6.pdf

SSF2112H2 SSF2112H2

SSF2145CH6 Main Product Characteristics: n-ch p-ch VDSS 20V -20V RDSon(typ.) 38mohm 64mohm Marking and pin TSOP-6 Schematic diagram ID 4.8A 2.9A Assignment Features and Benefits: Advanced trench MOSFET process technology Special designed for load switching and buttery protection applications 150 operating temperature Description: It utilizes the l

 9.2. Size:545K  silikron
 ssf2129h3.pdf

SSF2112H2 SSF2112H2

SSF2129H3 Main Product Characteristics: VDSS -20V D1D2G1 G2 RDS(on) 21m (typ.) S1 S2ID -6.0A Marking and pin SOP-8 S che matic diagram Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and re

 9.3. Size:542K  silikron
 ssf2122e.pdf

SSF2112H2 SSF2112H2

SSF2122E Main Product Characteristics: VDSS 20V RDS(on) 15.2mohm(typ.) ID 7A DFN 3x3-8L Marking and pin Schematic diagram A ss ignme nt Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recov

 9.4. Size:621K  silikron
 ssf2160g4.pdf

SSF2112H2 SSF2112H2

SSF2160G4Main Product Characteristics: VDSS 20V 2160G42160G4S25 RDS(on) 28mohm(typ.)ID 4.5A Marking and pin SOT23-3Schematic diagramAssignmentFeatures and Benefits: Advanced trench MOSFET process technology Special designed for buttery protection, load switching and general power management Ultra low on-resistance with low gate charge Fast switc

Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: HGI090NE6A | HGD093N12SL

 

 
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