SSF2112H2 MOSFET Datasheet: N-Ch, 20V, 8A. Full specification with pinout and replacement list

SSF2112H2 Specs and Replacement

Type Designator: SSF2112H2

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4.8 nS

Cossⓘ - Output Capacitance: 229 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0125 Ohm

Package: TSSOP8

SSF2112H2 substitution

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SSF2112H2 datasheet

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SSF2112H2 Main Product Characteristics D1 D2 VDSS 20V D1 D2 S1 S2 G1 G2 2112H2 8205A S1 S2 G1 G2 RDS(on) 10mohm(typ.) S1 S2 ID 8A Marking and pin Schematic diagram TSSOP-8 Assignment Features and Benefits Advanced trench MOSFET process technology Special designed for buttery protection, load switching and general power management Ultra low on-re... See More ⇒

8.1. Size:347K silikron
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SSF2116EJ3 Main Product Characteristics VDSS 20V RDS(on) 14.5mohm typ. ID 8.5A DFN2X5-6L-EP Marking and pin Schematic diagram Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recov... See More ⇒

9.1. Size:280K silikron
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SSF2145CH6 Main Product Characteristics n-ch p-ch VDSS 20V -20V RDSon(typ.) 38mohm 64mohm Marking and pin TSOP-6 Schematic diagram ID 4.8A 2.9A Assignment Features and Benefits Advanced trench MOSFET process technology Special designed for load switching and buttery protection applications 150 operating temperature Description It utilizes the l... See More ⇒

9.2. Size:545K silikron
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SSF2129H3 Main Product Characteristics VDSS -20V D1 D2 G1 G2 RDS(on) 21m (typ.) S1 S2 ID -6.0A Marking and pin SOP-8 S che matic diagram Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and re... See More ⇒