SSF2356G8 Todos los transistores

 ..1. Size:383K  silikron
 ssf2356g8.pdf

 9.1. Size:229K  silikron
 ssf2314.pdf

SSF2314 D DESCRIPTION The SSF2314 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation G with gate voltages as low as 0.65V. This device is suitable for use as a Battery protection or in other Switching application. S Schematic diagram GENERAL FEATURES V = 20V,I = 4.5A DS D R

 9.2. Size:342K  silikron
 ssf2300.pdf

SSF2300 D DESCRIPTION The SSF2300 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation G with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S Schematic diagram GENERAL FEATURES VDS = 20V,ID = 2.4A RDS(ON)

 9.3. Size:401K  silikron
 ssf2300a.pdf

SSF2300A D DESCRIPTION The SSF2300A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation G with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S Schematic diagram GENERAL FEATURES VDS = 20V,ID = 4.5A RDS(ON)

 9.4. Size:200K  silikron
 ssf2316e.pdf

SSF2316E GENERAL FEATURES VDS = 20V,ID = 7A RDS(ON)

 9.5. Size:535K  silikron
 ssf2341e.pdf

SSF2341E Main Product Characteristics VDSS -20V RDS(on) 37m (typ.) ID -4A Marking and pin SOT-23 Schematic diagram Assignme nt Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

 9.6. Size:302K  silikron
 ssf2306.pdf

SSF2306 D DESCRIPTION The SSF2306 uses advanced trench technology to provide excellent RDS(ON), G low gate charge and operation with gate voltages as low as 2.5V. S GENERAL FEATURES Schematic diagram VDS = 30V,ID = 5A RDS(ON)

 9.7. Size:282K  silikron
 ssf2301b.pdf

SSF2301B D DESCRIPTION The SSF2301B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable G for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES VDS = -20V,ID = -2.8A RDS(ON)

 9.8. Size:302K  silikron
 ssf2300b.pdf

SSF2300B D DESCRIPTION The SSF2300B uses advanced trench technology to provide excellent R , low gate charge and operation DS(ON) G with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S Schematic diagram GENERAL FEATURES V = 20V,I = 4.5A DS D R

 9.9. Size:317K  silikron
 ssf2307b.pdf

SSF2307B D DESCRIPTION The SSF2307B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable G for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES VDS = -20V,ID = -3A RDS(ON)

 9.10. Size:264K  silikron
 ssf2336.pdf

SSF2336 D DESCRIPTION The SSF2336 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation G with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S Schematic diagram GENERAL FEATURES VDS = 20V,ID = 4.2A RDS(ON)

 9.11. Size:341K  silikron
 ssf2318e.pdf

SSF2318E DESCRIPTION The SSF2318E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES VDS = 20V,ID =6.5A Schematic diagram RDS(ON)

 9.12. Size:275K  silikron
 ssf2301a.pdf

SSF2301A D DESCRIPTION The SSF2301A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable G for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES VDS = -20V,ID = -4A RDS(ON)

 9.13. Size:323K  silikron
 ssf2305.pdf

SSF2305 D DESCRIPTION The SSF2305 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 0.5V. This device is suitable G for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES VDS = -20V,ID = -3A RDS(ON)

 9.14. Size:566K  silikron
 ssf2301.pdf

SSF2301 Main Product Characteristics D VDSS -20V G RDS(on) 60m (typ.) S ID -3A Marking and pin SOT-23 Schematic diagram Assignme nt Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body re

 9.15. Size:387K  silikron
 ssf2302.pdf

SSF2302 D DESCRIPTION The SSF2302 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation G with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S Schematic diagram GENERAL FEATURES VDS = 20V,ID = 2.4A D 3 RDS(ON)

 9.16. Size:281K  silikron
 ssf2312.pdf

SSF2312 D DESCRIPTION The SSF2312 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation G with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S Schematic diagram GENERAL FEATURES D VDS = 20V,ID = 4.5A 3 RDS(ON)

 9.17. Size:445K  goodark
 gdssf2300.pdf

GDSSF2300 D DESCRIPTION The SSF2300 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation G with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S Schematic diagram GENERAL FEATURES VDS = 20V,ID = 2.4A RDS(ON)

 9.18. Size:911K  cn vbsemi
 ssf2341e.pdf

SSF2341E www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFET e - 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested 0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/EC APPLICATION