SSF2356G8 Specs and Replacement
Type Designator: SSF2356G8
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 0.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 0.54 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Cossⓘ -
Output Capacitance: 17 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.55 Ohm
Package: SOT363
- MOSFET ⓘ Cross-Reference Search
SSF2356G8 datasheet
9.1. Size:229K silikron
ssf2314.pdf 
SSF2314 D DESCRIPTION The SSF2314 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation G with gate voltages as low as 0.65V. This device is suitable for use as a Battery protection or in other Switching application. S Schematic diagram GENERAL FEATURES V = 20V,I = 4.5A DS D R ... See More ⇒
9.2. Size:342K silikron
ssf2300.pdf
SSF2300 D DESCRIPTION The SSF2300 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation G with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S Schematic diagram GENERAL FEATURES VDS = 20V,ID = 2.4A RDS(ON) ... See More ⇒
9.3. Size:401K silikron
ssf2300a.pdf
SSF2300A D DESCRIPTION The SSF2300A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation G with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S Schematic diagram GENERAL FEATURES VDS = 20V,ID = 4.5A RDS(ON) ... See More ⇒
9.5. Size:535K silikron
ssf2341e.pdf
SSF2341E Main Product Characteristics VDSS -20V RDS(on) 37m (typ.) ID -4A Marking and pin SOT-23 Schematic diagram Assignme nt Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery ... See More ⇒
9.6. Size:302K silikron
ssf2306.pdf
SSF2306 D DESCRIPTION The SSF2306 uses advanced trench technology to provide excellent RDS(ON), G low gate charge and operation with gate voltages as low as 2.5V. S GENERAL FEATURES Schematic diagram VDS = 30V,ID = 5A RDS(ON) ... See More ⇒
9.7. Size:282K silikron
ssf2301b.pdf
SSF2301B D DESCRIPTION The SSF2301B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable G for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES VDS = -20V,ID = -2.8A RDS(ON) ... See More ⇒
9.8. Size:302K silikron
ssf2300b.pdf
SSF2300B D DESCRIPTION The SSF2300B uses advanced trench technology to provide excellent R , low gate charge and operation DS(ON) G with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S Schematic diagram GENERAL FEATURES V = 20V,I = 4.5A DS D R ... See More ⇒
9.9. Size:317K silikron
ssf2307b.pdf
SSF2307B D DESCRIPTION The SSF2307B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable G for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES VDS = -20V,ID = -3A RDS(ON) ... See More ⇒
9.10. Size:264K silikron
ssf2336.pdf
SSF2336 D DESCRIPTION The SSF2336 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation G with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S Schematic diagram GENERAL FEATURES VDS = 20V,ID = 4.2A RDS(ON) ... See More ⇒
9.11. Size:341K silikron
ssf2318e.pdf
SSF2318E DESCRIPTION The SSF2318E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES VDS = 20V,ID =6.5A Schematic diagram RDS(ON) ... See More ⇒
9.12. Size:275K silikron
ssf2301a.pdf
SSF2301A D DESCRIPTION The SSF2301A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable G for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES VDS = -20V,ID = -4A RDS(ON) ... See More ⇒
9.13. Size:323K silikron
ssf2305.pdf
SSF2305 D DESCRIPTION The SSF2305 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 0.5V. This device is suitable G for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES VDS = -20V,ID = -3A RDS(ON) ... See More ⇒
9.14. Size:566K silikron
ssf2301.pdf
SSF2301 Main Product Characteristics D VDSS -20V G RDS(on) 60m (typ.) S ID -3A Marking and pin SOT-23 Schematic diagram Assignme nt Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body re... See More ⇒
9.15. Size:387K silikron
ssf2302.pdf
SSF2302 D DESCRIPTION The SSF2302 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation G with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S Schematic diagram GENERAL FEATURES VDS = 20V,ID = 2.4A D 3 RDS(ON) ... See More ⇒
9.16. Size:281K silikron
ssf2312.pdf
SSF2312 D DESCRIPTION The SSF2312 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation G with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S Schematic diagram GENERAL FEATURES D VDS = 20V,ID = 4.5A 3 RDS(ON) ... See More ⇒
9.17. Size:445K goodark
gdssf2300.pdf
GDSSF2300 D DESCRIPTION The SSF2300 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation G with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S Schematic diagram GENERAL FEATURES VDS = 20V,ID = 2.4A RDS(ON) ... See More ⇒
9.18. Size:911K cn vbsemi
ssf2341e.pdf
SSF2341E www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFET e - 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested 0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/EC APPLICATION... See More ⇒
Detailed specifications: SSF2306, SSF2307B, SSF2312, SSF2314, SSF2316E, SSF2318E, SSF2336, SSF2341E, AO3401, SSF2418E, SSF2418EB, SSF2429, SSF2437E, SSF2449, SSF2485, SSF2610E, SSF2616E
Keywords - SSF2356G8 MOSFET specs
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