SSF2841 Todos los transistores

 ..1. Size:315K  silikron
 ssf2841.pdf

SSF2841 DESCRIPTION The SSF2841 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as -0.7V. This device is suitable for use as a load switch or in PWM applications. Schematic diagram GENERAL FEATURES VDS = -20V,ID = -5A RDS(ON)

 9.1. Size:533K  silikron
 ssf2814eh2.pdf

SSF2814EH2 Main Product Characteristics VDSS 20V RDS(on) 14m (typ.) ID 8A Marking and pin TSSOP-8 Schematic diagram Assignment Features and Benefits Advanced MOSFET process technology Ultra low on-resistance with low gate charge High Power and current handing capability 150 operating temperature G/S ESD protect 2KV (HBM) Description

 9.2. Size:286K  silikron
 ssf2814e.pdf

SSF2814E DESCRIPTION The SSF2814E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES VDS = 20V,ID = 7A Schematic diagram RDS(ON)

 9.3. Size:528K  silikron
 ssf2810eh2.pdf

SSF2810EH2 Main Product Characteristics VDSS 20V RDS(on) 10m (typ.) ID 8A Marking and pin TSSOP-8 Schematic diagram Assignment Features and Benefits Advanced MOSFET process technology Ultra low on-resistance with low gate charge High Power and current handing capability 150 operating temperature G/S ESD protect 2KV (HBM) Description

 9.4. Size:298K  silikron
 ssf2816eb.pdf

SSF2816EB DESCRIPTION The SSF2816EB uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 0.75V. GENERAL FEATURES VDS = 20V,ID = 7A Schematic diagram RDS(ON)

 9.5. Size:425K  silikron
 ssf2816e.pdf

SSF2816E Main Product Characteristics VDSS 20V RDS(on) 16.5mohm(typ.) ID 7A Marking and pin TSSOP-8 Schematic diagram Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

 9.6. Size:458K  goodark
 ssf2816ebk.pdf

SSF2816EBK 20V Dual N-Channel MOSFET DESCRIPTION The SSF2816EBK uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES VDS = 20V,ID = 7A Schematic Diagram RDS(ON)