SSF2841 Todos los transistores

 

SSF2841 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SSF2841
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 60 nS
   Cossⓘ - Capacitancia de salida: 130 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.05 Ohm
   Paquete / Cubierta: TSSOP8
 

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SSF2841 Datasheet (PDF)

 ..1. Size:315K  silikron
ssf2841.pdf pdf_icon

SSF2841

SSF2841DESCRIPTION The SSF2841 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as -0.7V. This device is suitable for use as a load switch or in PWM applications. Schematic diagram GENERAL FEATURES VDS = -20V,ID = -5A RDS(ON)

 9.1. Size:533K  silikron
ssf2814eh2.pdf pdf_icon

SSF2841

SSF2814EH2 Main Product Characteristics: VDSS 20V RDS(on) 14m (typ.) ID 8A Marking and pin TSSOP-8 Schematic diagram Assignment Features and Benefits: Advanced MOSFET process technology Ultra low on-resistance with low gate charge High Power and current handing capability 150 operating temperature G/S ESD protect 2KV (HBM) Description:

 9.2. Size:286K  silikron
ssf2814e.pdf pdf_icon

SSF2841

SSF2814E DESCRIPTION The SSF2814E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES VDS = 20V,ID = 7A Schematic diagram RDS(ON)

 9.3. Size:528K  silikron
ssf2810eh2.pdf pdf_icon

SSF2841

SSF2810EH2 Main Product Characteristics: VDSS 20V RDS(on) 10m (typ.) ID 8A Marking and pin TSSOP-8 Schematic diagram Assignment Features and Benefits: Advanced MOSFET process technology Ultra low on-resistance with low gate charge High Power and current handing capability 150 operating temperature G/S ESD protect 2KV (HBM) Description:

Otros transistores... SSF26NS60 , SSF26NS60A , SSF2701 , SSF2810EH2 , SSF2814E , SSF2814EH2 , SSF2816E , SSF2816EB , IRFZ24N , SSF2N60 , SSF2N60D , SSF2N60D2 , SSF2N60F , SSF2N60G , SSF3002EG1 , SSF3018 , SSF3018D .

History: 2SK1524 | IPA041N04NG | BRCS070N03DP | PMPB48EP | CJQ9435 | 2N7002TC

 

 
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