All MOSFET. SSF2841 Datasheet

 

SSF2841 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SSF2841
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 9.6 nC
   trⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 130 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: TSSOP8

 SSF2841 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SSF2841 Datasheet (PDF)

 ..1. Size:315K  silikron
 ssf2841.pdf

SSF2841 SSF2841

SSF2841DESCRIPTION The SSF2841 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as -0.7V. This device is suitable for use as a load switch or in PWM applications. Schematic diagram GENERAL FEATURES VDS = -20V,ID = -5A RDS(ON)

 9.1. Size:533K  silikron
 ssf2814eh2.pdf

SSF2841 SSF2841

SSF2814EH2 Main Product Characteristics: VDSS 20V RDS(on) 14m (typ.) ID 8A Marking and pin TSSOP-8 Schematic diagram Assignment Features and Benefits: Advanced MOSFET process technology Ultra low on-resistance with low gate charge High Power and current handing capability 150 operating temperature G/S ESD protect 2KV (HBM) Description:

 9.2. Size:286K  silikron
 ssf2814e.pdf

SSF2841 SSF2841

SSF2814E DESCRIPTION The SSF2814E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES VDS = 20V,ID = 7A Schematic diagram RDS(ON)

 9.3. Size:528K  silikron
 ssf2810eh2.pdf

SSF2841 SSF2841

SSF2810EH2 Main Product Characteristics: VDSS 20V RDS(on) 10m (typ.) ID 8A Marking and pin TSSOP-8 Schematic diagram Assignment Features and Benefits: Advanced MOSFET process technology Ultra low on-resistance with low gate charge High Power and current handing capability 150 operating temperature G/S ESD protect 2KV (HBM) Description:

 9.4. Size:298K  silikron
 ssf2816eb.pdf

SSF2841 SSF2841

SSF2816EB DESCRIPTION The SSF2816EB uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 0.75V. GENERAL FEATURES VDS = 20V,ID = 7A Schematic diagram RDS(ON)

 9.5. Size:425K  silikron
 ssf2816e.pdf

SSF2841 SSF2841

SSF2816E Main Product Characteristics: VDSS 20V RDS(on) 16.5mohm(typ.) ID 7A Marking and pin TSSOP-8 Schematic diagram Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

 9.6. Size:458K  goodark
 ssf2816ebk.pdf

SSF2841 SSF2841

SSF2816EBK 20V Dual N-Channel MOSFET DESCRIPTION The SSF2816EBK uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES VDS = 20V,ID = 7A Schematic Diagram RDS(ON)

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