SSF3904A Todos los transistores

 

SSF3904A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SSF3904A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 100 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 120 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 18 nS
   Cossⓘ - Capacitancia de salida: 748 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0036 Ohm
   Paquete / Cubierta: D2PAK

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SSF3904A Datasheet (PDF)

 ..1. Size:534K  silikron
ssf3904a.pdf

SSF3904A
SSF3904A

SSF3904AMain Product Characteristics: VDSS 30V RDS(on) 2.6m (typ.) ID 120AMarking and pin TO263Schematic diagramAssignmentFeatures and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

 7.1. Size:963K  goodark
ssf3904u.pdf

SSF3904A
SSF3904A

SSFT3904U 35V N-Channel MOSFET Main Product Characteristics VDSS 35V SSFT3904USSFT3904U RDS(on) 3.0mohm(typ.) ID 110A TO-220 Ma r ki ng an d Pin Schematic Diagram Assignment Features and Benefits Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge

 9.1. Size:570K  silikron
ssf3944j7-hf.pdf

SSF3904A
SSF3904A

SSF3944J7-HFMain Product Characteristics: VDSS 30V RDS(on) 1.6m (typ.) ID 150APPAK5*6-8LSchematic diagramFeatures and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150 operating te

 9.2. Size:544K  silikron
ssf3960j7-hf.pdf

SSF3904A
SSF3904A

SSF3960J7-HFMain Product Characteristics: VDSS 30V RDS(on) 1.9m (typ.) ID 130APPAK5*6-8LSchematic diagramFeatures and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150 operating te

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