SSF3904A
MOSFET. Datasheet pdf. Equivalent
Type Designator: SSF3904A
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 100
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 120
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 68
nC
trⓘ - Rise Time: 18
nS
Cossⓘ -
Output Capacitance: 748
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0036
Ohm
Package:
D2PAK
SSF3904A
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SSF3904A
Datasheet (PDF)
..1. Size:534K silikron
ssf3904a.pdf
SSF3904AMain Product Characteristics: VDSS 30V RDS(on) 2.6m (typ.) ID 120AMarking and pin TO263Schematic diagramAssignmentFeatures and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery
7.1. Size:963K goodark
ssf3904u.pdf
SSFT3904U 35V N-Channel MOSFET Main Product Characteristics VDSS 35V SSFT3904USSFT3904U RDS(on) 3.0mohm(typ.) ID 110A TO-220 Ma r ki ng an d Pin Schematic Diagram Assignment Features and Benefits Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge
9.1. Size:570K silikron
ssf3944j7-hf.pdf
SSF3944J7-HFMain Product Characteristics: VDSS 30V RDS(on) 1.6m (typ.) ID 150APPAK5*6-8LSchematic diagramFeatures and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150 operating te
9.2. Size:544K silikron
ssf3960j7-hf.pdf
SSF3960J7-HFMain Product Characteristics: VDSS 30V RDS(on) 1.9m (typ.) ID 130APPAK5*6-8LSchematic diagramFeatures and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150 operating te
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