SSF5N60G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SSF5N60G
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 126 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 VQgⓘ - Carga de la puerta: 10.26 nC
trⓘ - Tiempo de subida: 6.8 nS
Cossⓘ - Capacitancia de salida: 66.65 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.15 Ohm
Paquete / Cubierta: IPAK
Búsqueda de reemplazo de MOSFET SSF5N60G
SSF5N60G Datasheet (PDF)
ssf5n60g.pdf
SSF5N60G Main Product Characteristics: VDSS 600V RDS(on) 1.88 (typ.) ID 5A TO-251 Marking a nd p in Sche ma ti c di agr a m Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery
ssf5n60d.pdf
SSF5N60D Main Product Characteristics: VDSS 600V RDS(on) 1.88 (typ.) ID 5A TO-252 Marking a nd p in Sche ma ti c di agr a m Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery
ssf5n60f.pdf
SSF5N60FMain Product Characteristics: VDSS 600V RDS(on) 2ohm(typ.)ID 4AMarking and pin TO220FSchematic diagramFeatures and Benefits: Assignment Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150
ssf5ns65ug.pdf
SSF5NS65UG Main Product Characteristics: VDSS 650V RDS(on) 1.1 (typ.) ID 5A TO-251 (IPAK) Marking and p in Schematic diagram Assignment Features and Benefits: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF5NS65UG series MOSFETs is a new technology,
ssf5ns50u.pdf
SSF5NS50U Main Product Characteristics: VDSS 500V RDS(on) 0.55 (typ.) ID 5A Marking and pi n TO-220 Schematic diagram Assignment Features and Benefits: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF5NS50U series MOSFETs is a new technology, which
ssf5ns70ug.pdf
SSF5NS70UG Main Product Characteristics VDSS 700V RDS(on) 1.0 (typ.) ID 5A TO-251 (IPAK) Marking and P in Schematic Diagram Assignment Features and Benefits High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description The SSF5NS70UG series MOSFETs is a new technology, whi
ssf5ns60ud.pdf
SSF5NS60UD Main Product Characteristics: VDSS 600V RDS(on) 0.73 (typ.) ID 5A TO-252 (D-PAK) Marking a nd p in Sche ma ti c di agr a m Assignment Features and Benefits: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF5NS60UD series MOSFETs is a new tec
ssf5n50d.pdf
SSF5N50D Main Product Characteristics: VDSS 500V RDS(on) 1.5 (typ.) ID 5A TO-252 Marking a nd p in S che ma ti c di ag r a m Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery
ssf5ns70g-d-f.pdf
SSF5NS70G/D/F Main Product Characteristics: VDSS 700V RDS(on) 1.23 (typ.) ID 5A 251 TO-252 TO- TO-220F Schematic diagram SSF5NS70G SSF5NS70D SSF5NS70F Features and Benefits: Feathers: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF5NS70G/D/F s
ssf5ns65g.pdf
SSF5NS65G Main Product Characteristics: VDSS 650V RDS(on) 1.0 (typ.) ID 5A TO-251 Marking a nd p in Sche ma ti c di agr a m Assignment Features and Benefits: Feathers: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF5NS65G series MOSFETs is a new te
ssf5ns70gbp.pdf
SSF5NS70GB Main Product Characteristics VDSS 700V RDS(on) 1.3 (typ.) ID 5A TO-251S Marking and Pin Schematic Diagram Assignment Features and Benefits High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF5NS70GB series MOSFETs is a new technology, which com
ssf5ns65ud.pdf
SSF5NS65UD Main Product Characteristics: VDSS 650V RDS(on) 0.74 (typ.) ID 5A TO-252 (DPAK) Marking and p in Schematic diagram Assignment Features and Benefits: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF5NS65UD series MOSFETs is a new technology,
ssf5ns70uf.pdf
SSF5NS70UF Main Product Characteristics: VDSS 700V RDS(on) 1.0 (typ.) ID 5A TO-220F Marking and pin Schematic diagram Assignment Features and Benefits: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF5NS70UF series MOSFETs is a new technology, which c
ssf5ns65uf.pdf
SSF5NS65UF Main Product Characteristics: VDSS 650V RDS(on) 0.9 (typ.) ID 5A TO-220F Marking and p in Schematic diagram Assignment Features and Benefits: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF5NS65UF series MOSFETs is a new technology, which
Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
History: HPP080NE5SPA
History: HPP080NE5SPA
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Recientemente añadidas las descripciónes de los transistores:
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