All MOSFET. SSF5N60G Datasheet

 

SSF5N60G MOSFET. Datasheet pdf. Equivalent


   Type Designator: SSF5N60G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 126 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 10.26 nC
   trⓘ - Rise Time: 6.8 nS
   Cossⓘ - Output Capacitance: 66.65 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.15 Ohm
   Package: IPAK

 SSF5N60G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SSF5N60G Datasheet (PDF)

 ..1. Size:491K  silikron
ssf5n60g.pdf

SSF5N60G SSF5N60G

SSF5N60G Main Product Characteristics: VDSS 600V RDS(on) 1.88 (typ.) ID 5A TO-251 Marking a nd p in Sche ma ti c di agr a m Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

 7.1. Size:483K  silikron
ssf5n60d.pdf

SSF5N60G SSF5N60G

SSF5N60D Main Product Characteristics: VDSS 600V RDS(on) 1.88 (typ.) ID 5A TO-252 Marking a nd p in Sche ma ti c di agr a m Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

 7.2. Size:376K  silikron
ssf5n60f.pdf

SSF5N60G SSF5N60G

SSF5N60FMain Product Characteristics: VDSS 600V RDS(on) 2ohm(typ.)ID 4AMarking and pin TO220FSchematic diagramFeatures and Benefits: Assignment Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150

 9.1. Size:209K  1
ssf5n90a.pdf

SSF5N60G SSF5N60G

 9.2. Size:212K  1
ssf5n80a.pdf

SSF5N60G SSF5N60G

 9.3. Size:459K  silikron
ssf5ns65ug.pdf

SSF5N60G SSF5N60G

SSF5NS65UG Main Product Characteristics: VDSS 650V RDS(on) 1.1 (typ.) ID 5A TO-251 (IPAK) Marking and p in Schematic diagram Assignment Features and Benefits: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF5NS65UG series MOSFETs is a new technology,

 9.4. Size:480K  silikron
ssf5ns50u.pdf

SSF5N60G SSF5N60G

SSF5NS50U Main Product Characteristics: VDSS 500V RDS(on) 0.55 (typ.) ID 5A Marking and pi n TO-220 Schematic diagram Assignment Features and Benefits: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF5NS50U series MOSFETs is a new technology, which

 9.5. Size:430K  silikron
ssf5ns70ug.pdf

SSF5N60G SSF5N60G

SSF5NS70UG Main Product Characteristics VDSS 700V RDS(on) 1.0 (typ.) ID 5A TO-251 (IPAK) Marking and P in Schematic Diagram Assignment Features and Benefits High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description The SSF5NS70UG series MOSFETs is a new technology, whi

 9.6. Size:485K  silikron
ssf5ns60ud.pdf

SSF5N60G SSF5N60G

SSF5NS60UD Main Product Characteristics: VDSS 600V RDS(on) 0.73 (typ.) ID 5A TO-252 (D-PAK) Marking a nd p in Sche ma ti c di agr a m Assignment Features and Benefits: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF5NS60UD series MOSFETs is a new tec

 9.7. Size:521K  silikron
ssf5n50d.pdf

SSF5N60G SSF5N60G

SSF5N50D Main Product Characteristics: VDSS 500V RDS(on) 1.5 (typ.) ID 5A TO-252 Marking a nd p in S che ma ti c di ag r a m Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

 9.8. Size:547K  silikron
ssf5ns70g-d-f.pdf

SSF5N60G SSF5N60G

SSF5NS70G/D/F Main Product Characteristics: VDSS 700V RDS(on) 1.23 (typ.) ID 5A 251 TO-252 TO- TO-220F Schematic diagram SSF5NS70G SSF5NS70D SSF5NS70F Features and Benefits: Feathers: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF5NS70G/D/F s

 9.9. Size:477K  silikron
ssf5ns65g.pdf

SSF5N60G SSF5N60G

SSF5NS65G Main Product Characteristics: VDSS 650V RDS(on) 1.0 (typ.) ID 5A TO-251 Marking a nd p in Sche ma ti c di agr a m Assignment Features and Benefits: Feathers: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF5NS65G series MOSFETs is a new te

 9.10. Size:424K  silikron
ssf5ns70gbp.pdf

SSF5N60G SSF5N60G

SSF5NS70GB Main Product Characteristics VDSS 700V RDS(on) 1.3 (typ.) ID 5A TO-251S Marking and Pin Schematic Diagram Assignment Features and Benefits High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF5NS70GB series MOSFETs is a new technology, which com

 9.11. Size:469K  silikron
ssf5ns65ud.pdf

SSF5N60G SSF5N60G

SSF5NS65UD Main Product Characteristics: VDSS 650V RDS(on) 0.74 (typ.) ID 5A TO-252 (DPAK) Marking and p in Schematic diagram Assignment Features and Benefits: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF5NS65UD series MOSFETs is a new technology,

 9.12. Size:491K  silikron
ssf5ns70uf.pdf

SSF5N60G SSF5N60G

SSF5NS70UF Main Product Characteristics: VDSS 700V RDS(on) 1.0 (typ.) ID 5A TO-220F Marking and pin Schematic diagram Assignment Features and Benefits: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF5NS70UF series MOSFETs is a new technology, which c

 9.13. Size:446K  silikron
ssf5ns65uf.pdf

SSF5N60G SSF5N60G

SSF5NS65UF Main Product Characteristics: VDSS 650V RDS(on) 0.9 (typ.) ID 5A TO-220F Marking and p in Schematic diagram Assignment Features and Benefits: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF5NS65UF series MOSFETs is a new technology, which

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: IRFP9240

 

 
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