SSS1004 Todos los transistores

 

SSS1004 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SSS1004

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 375 W

Tensión drenaje-fuente (Vds): 100 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 180 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 224 nC

Tiempo de elevación (tr): 141 nS

Conductancia de drenaje-sustrato (Cd): 657 pF

Resistencia drenaje-fuente RDS(on): 0.0047 Ohm

Empaquetado / Estuche: TO220

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SSS1004 Datasheet (PDF)

1.1. sss1004.pdf Size:482K _silikron

SSS1004
SSS1004

 SSS1004 Main Product Characteristics VDSS 100V RDS(on) 3.7mΩ (typ.) ID 180A ① Marking a nd p in TO-220 Schematic diagram Assignment Features and Benefits  Advanced Process Technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  17

1.2. sss1004a7.pdf Size:362K _silikron

SSS1004
SSS1004

 SSS1004A7 Main Product Characteristics VDSS 100V 1, Gate RDS(on) 3.0mΩ (typ.) 2~3,5~7 Source 4,8 Drain ID 180A ① Schematic diagram TO-263-7L Pin Assignment Features and Benefits  Advanced Process Technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and re

 5.1. sss10n60a.pdf Size:504K _samsung

SSS1004
SSS1004

Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS(on) = 0.8 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 5.1 A Improved Gate Charge Extended Safe Operating Area A Lower Leakage Current : 25 (Max.) @ VDS = 600V Low RDS(ON) : 0.646 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units

5.2. sss10n60.pdf Size:14125K _shenzhen-tuofeng-semi

SSS1004
SSS1004

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SSS10N60 N 沟道增强型场效应晶体管 N-CHANNEL MOSFET 封装 Package 主要参数 MAIN CHARACTERISTICS 10.0 A ID 600 V VDSS Rdson 0.75Ω (@Vgs=10V) 34 nC Qg APPLICATIONS 用途 High efficiency switch 高频开关电源 mode power supplies 电子镇流器 Electronic lamp ballasts UPS 电源

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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