All MOSFET. SSS1004 Datasheet

 

SSS1004 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SSS1004
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 375 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 180 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 224 nC
   trⓘ - Rise Time: 141 nS
   Cossⓘ - Output Capacitance: 657 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0047 Ohm
   Package: TO220

 SSS1004 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SSS1004 Datasheet (PDF)

 ..1. Size:482K  silikron
 sss1004.pdf

SSS1004 SSS1004

SSS1004 Main Product Characteristics VDSS 100V RDS(on) 3.7m (typ.) ID 180A Marking a nd p in TO-220 Schematic diagram Assignment Features and Benefits Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 17

 0.1. Size:362K  silikron
 sss1004a7.pdf

SSS1004 SSS1004

SSS1004A7 Main Product Characteristics VDSS 100V 1, Gate RDS(on) 3.0m (typ.) 2~3,5~7 Source 4,8 Drain ID 180A Schematic diagram TO-263-7L Pin Assignment Features and Benefits Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and re

 9.1. Size:504K  samsung
 sss10n60a.pdf

SSS1004 SSS1004

Advanced Power MOSFETFEATURESBVDSS = 600 V Avalanche Rugged TechnologyRDS(on) = 0.8 Rugged Gate Oxide Technology Lower Input CapacitanceID = 5.1 A Improved Gate Charge Extended Safe Operating AreaA Lower Leakage Current : 25 (Max.) @ VDS = 600V Low RDS(ON) : 0.646 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value

 9.2. Size:14125K  shenzhen
 sss10n60.pdf

SSS1004 SSS1004

Shenzhen Tuofeng Semiconductor Technology Co., LtdSSS10N60N N-CHANNEL MOSFET Package MAIN CHARACTERISTICS 10.0 AID600 V VDSS Rdson 0.75 @Vgs=10V34 nC Qg APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS

 9.3. Size:4141K  cn tuofeng
 sss10n60.pdf

SSS1004 SSS1004

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO. LTDN-CHANNEL MOSFETSSS10N60 Package MAIN CHARACTERISTICS 10.0 AID600 V VDSS 0.75 Rdson@Vgs=10V34 nC Qg APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UPS

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: SSS3N80A

 

 
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