SSF6007 Todos los transistores

 

SSF6007 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SSF6007
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.23 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 50 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 0.13 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2 V
   trⓘ - Tiempo de subida: 1.3 nS
   Cossⓘ - Capacitancia de salida: 18 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 7 Ohm
   Paquete / Cubierta: SOT23

 Búsqueda de reemplazo de MOSFET SSF6007

 

SSF6007 Datasheet (PDF)

 ..1. Size:503K  silikron
ssf6007.pdf

SSF6007
SSF6007

SSF6007 Main Product Characteristics: VDSS -50V 60076007 RDS(on) 2.1ohm(typ.) ID -130mA Marking and p in Schematic dia gram SOT-23 Assignment Features and Benefits: Advanced MOSFET process technology Special designed for Line current interrupter in telephone sets, Relay, high speed and line transformer drivers and general purpose applications Ultra l

 ..2. Size:370K  goodark
ssf6007.pdf

SSF6007
SSF6007

SSF6007 50V P-Channel MOSFET Main Product Characteristics VDSS -50V 60076007 RDS(on) 2.1ohm(typ.) ID -130mA Mark in g a nd P i n Sc hema t ic D i a gra m SOT-23 Assignment Features and Benefits Advanced trench MOSFET process technology Special designed for Line current interrupter in telephone sets, Relay, high speed and line transformer drivers and genera

 8.1. Size:597K  silikron
ssf6008.pdf

SSF6007
SSF6007

SSF6008 Feathers: ID =84A Advanced trench process technology BV=60V avalanche energy, 100% test Rdson=8m Fully characterized avalanche voltage and current Description: The SSF6008 is a new generation of high voltage and low current NChannel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical parameter

 8.2. Size:339K  silikron
ssf6005.pdf

SSF6007
SSF6007

SSF6005Main Product Characteristics: VDSS 60V RDS(on) 2.7m(typ.) ID 160AMarking and pin TO-220Schematic diagramAssignmentFeatures and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175 o

 9.1. Size:259K  silikron
ssf6014j7.pdf

SSF6007
SSF6007

SSF6014J7Main Product Characteristics: VDSS 60V RDS(on) 11m (typ.) ID 40APQFN 5x6Pin AssignmentSchematic DiagramFeatures and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175 ope

 9.2. Size:498K  silikron
ssf6072g5.pdf

SSF6007
SSF6007

SSF6072G5 Main Product Characteristics: VDSS 60V SSF6072G5SSF6072G560726072 RDS(on) 67m (typ.) ID 4A Marking and pin SOT-223 Schematic diagram Assignment Features and Benefits: Advanced MOSFET process technology Special designed for DC-DC and DC-AC converters, load switching and general purpose applications Ultra low on-resistance with low gate c

 9.3. Size:605K  silikron
ssf6010.pdf

SSF6007
SSF6007

SSF6010 Feathers: ID =75A Advanced trench process technology BV=60V avalanche energy, 100% test Rdson=8m (typ.) Fully characterized avalanche voltage and current Description: The SSF6010 is a new generation of middle voltage and high current NChannel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical

 9.4. Size:530K  silikron
ssf6092g1.pdf

SSF6007
SSF6007

SSF6092G1 Main Product Characteristics: VDSS 60V 70m(typ) RDS(on) 2.7A ID Marking and pin SOT23 Schematic diagram A ssign men t Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

 9.5. Size:688K  silikron
ssf6014d.pdf

SSF6007
SSF6007

SSF6014D Main Product Characteristics: VDSS 60V RDS(on) 12m(typ.) ID 60A DPAK Ma rk in g an d pi n Sc h ema t ic diag r am Assignment Features and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body rec

 9.6. Size:443K  silikron
ssf6010a.pdf

SSF6007
SSF6007

SSF6010A Feathers: ID =75A Advanced trench process technology BV=60V avalanche energy, 100% test Rdson=8m (typ.) Fully characterized avalanche voltage and current Description: The SSF6010A is a new generation of middle voltage and high current NChannel enhancement mode trench power MOSFET. This new technology increases the device reliability and electric

 9.7. Size:481K  silikron
ssf6014a.pdf

SSF6007
SSF6007

SSF6014A Feathers: ID =60A Advanced trench process technology BV=60V avalanche energy, 100% test Rdson=14mmax. Fully characterized avalanche voltage and current Description: The SSF6014A is a new generation of middle voltage and high current NChannel enhancement mode trench power MOSFET. This new technology increases the device reliability and ele

 9.8. Size:549K  silikron
ssf6025.pdf

SSF6007
SSF6007

SSF6025Main Product Characteristics:V -60VDSSR (on) 12m (typ.)DSI -60ADTO-220 Marking and pin Schematic diagramAssignmentFeatures and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching andgeneral purpose applications Ultra low on-resistance with low gate charge High Power and current handing capability Fu

 9.9. Size:807K  silikron
ssf6014j8.pdf

SSF6007
SSF6007

SSF6014J8Main Product Characteristics:V 60VDSSR (on) 16m (typ.)DSI 22ADPinAssignment Schematic diagramDFN3.3x3.3Bottom viewFeatures and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching andgeneral purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

 9.10. Size:654K  silikron
ssf6014.pdf

SSF6007
SSF6007

SSF6014 Feathers: ID =60A Advanced trench process technology BV=60V avalanche energy, 100% test Rdson=14mmax. Fully characterized avalanche voltage and current Description: The SSF6014 is a new generation of middle voltage and high current NChannel enhancement mode trench power MOSFET. This new technology increases the device reliability and elect

 9.11. Size:1096K  goodark
ssf6010g.pdf

SSF6007
SSF6007

SSF6010G 60V N-Channel MOSFET Main Product Characteristics VDSS 60V RDS(on) 8.3m (typ.) ID 64A TO-251 Mark in g a nd P i n Schematic Diagram Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and

 9.12. Size:913K  cn super semi
ssf60r360s2e ssp60r360s2e sst60r360s2e.pdf

SSF6007
SSF6007

SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor600V Super Junction Power MOSFET Gen-SS*60R360S2ERev. 1.2Sep. 2022www.supersemi.com.cnSSF60R360S2E/SSP60R360S2E/SST60R360S2E600V N-Channel Super-Junction MOSFET Gen-Description FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FETis util

 9.13. Size:887K  cn super semi
ssf60r070s2e ssp60r070s2e.pdf

SSF6007
SSF6007

SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor600V Super Junction Power MOSFET Gen-SS*60R070S2ERev. 1.1Aug. 2022www.supersemi.com.cnSSF60R070S2E/SSP60R070S2E600V N-Channel Super-Junction MOSFET Gen-Description FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FETis utilizing an adva

 9.14. Size:873K  cn super semi
ssf60r260s2e ssp60r260s2e.pdf

SSF6007
SSF6007

SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor600V Super Junction Power MOSFET Gen-SS*60R260S2ERev. 1.2Oct. 2022www.supersemi.com.cnSSF60R260S2E/SSP60R260S2E600V N-Channel Super-Junction MOSFET Gen-Description FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FETis utilizing an adva

 9.15. Size:1011K  cn super semi
ssf60r260s2 ssp60r260s2 ssi60r260s2.pdf

SSF6007
SSF6007

SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor600V Super Junction Power MOSFET Gen-SS*60R260S2Rev. 1.0Jun. 2019www.supersemi.com.cnSSF60R260S2/SSP60R260S2/SSI60R260S2600V N-Channel Super-Junction MOSFET Gen-Description FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FETis utilizin

 9.16. Size:1086K  cn super semi
ssf60r190s2 ssp60r190s2 ssw60r190s2.pdf

SSF6007
SSF6007

SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor600V Super Junction Power MOSFET Gen-SS*60R190S2Rev. 1.4Mar. 2022www.supersemi.com.cnSSF60R190S2/SSP60R190S2/SSW60R190S2600V N-Channel Super-Junction MOSFET Gen-Description FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FETis utilizin

 9.17. Size:838K  cn super semi
ssf60r190sfd2 ssp60r190sfd2.pdf

SSF6007
SSF6007

SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor600V Super Junction Power MOSFET Gen- With Fast-RecoverySS*60R190SFD2Rev. 1.1Aug. 2022www.supersemi.com.cnSSF60R190SFD2/SSP60R190SFD2600V N-Channel Super-Junction MOSFET Gen-With Fast-RecoveryDescription FeaturesSJ-FET is new generation of high voltage MOSFET family that Mult

 9.18. Size:1094K  cn super semi
ssf60r190sfd ssp60r190sfd ssw60r190sfd.pdf

SSF6007
SSF6007

SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor600V Super Junction Power MOSFET Gen- With Fast-RecoverySS*60R190SFDRev. 1.6Aug. 2022www.supersemi.com.cnSSF60R190SFD/SSP60R190SFD/SSW60R190SFD600V N-Channel Super-Junction MOSFET Gen-With Fast-RecoveryFeaturesDescription Multi-Epi process SJ-FETSJ-FET is new generation of

 9.19. Size:1108K  cn super semi
ssf60r280sfd ssp60r280sfd sst60r280sfd.pdf

SSF6007
SSF6007

SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor600V Super Junction Power MOSFET Gen- With Fast-Recovery SS*60R280SFDRev. 1.2Feb. 2023www.supersemi.com.cnSSF60R280SFD/SSP60R280SFD/SST60R280SFD600V N-Channel Super-Junction MOSFET Gen-With Fast-RecoveryFeaturesDescription Multi-Epi process SJ-FETSJ-FET is new generation o

 9.20. Size:850K  cn super semi
ssf60r190s2e ssp60r190s2e.pdf

SSF6007
SSF6007

SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor600V Super Junction Power MOSFET Gen-SS*60R190S2ERev. 1.0Aug. 2022www.supersemi.com.cnSSF60R190S2E/SSP60R190S2E600V N-Channel Super-Junction MOSFET Gen-Description FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FETis utilizing an adva

 9.21. Size:829K  cn super semi
ssf60r075sfd2 ssp60r075sfd2.pdf

SSF6007
SSF6007

SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor600V Super Junction Power MOSFET Gen- With Fast-RecoverySS*60R075SFD2Rev. 1.1Oct. 2022www.supersemi.com.cnSSF60R075SFD2/SSP60R075SFD2600V N-Channel Super-Junction MOSFET Gen-With Fast-RecoveryDescription FeaturesSJ-FET is new generation of high voltage MOSFET family that Mult

 9.22. Size:896K  cn super semi
ssf60r130s2 ssp60r130s2 ssw60r130s2.pdf

SSF6007
SSF6007

SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor600V Super Junction Power MOSFET Gen-SS*60R130S2Rev. 1.2Sep. 2022www.supersemi.com.cnSSF60R130S2/SSP60R130S2/SSW60R130S2600V N-Channel Super-Junction MOSFET Gen-Description FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FETis utilizin

 9.23. Size:914K  cn super semi
ssf60r099sfd ssp60r099sfd ssw60r099sfd.pdf

SSF6007
SSF6007

SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor600V Super Junction Power MOSFET Gen- With Fast-RecoverySS*60R099SFDRev. 1.2May. 2022www.supersemi.com.cnSSF60R099SFD/SSP60R099SFD/SSW60R099SFD600V N-Channel Super-Junction MOSFET Gen-With Fast-RecoveryDescription FeaturesSJ-FET is new generation of high voltage MOSFET family tha

 9.24. Size:919K  cn super semi
ssf60r099s2e ssp60r099s2e.pdf

SSF6007
SSF6007

SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor600V Super Junction Power MOSFET Gen-SS*60R099S2ERev. 1.2Nov. 2022www.supersemi.com.cnSSF60R099S2E/SSP60R099S2E600V N-Channel Super-Junction MOSFET Gen-Description FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FETis utilizing an adva

 9.25. Size:911K  cn super semi
ssf60r140sfd ssp60r140sfd ssw60r140sfd.pdf

SSF6007
SSF6007

SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor600V Super Junction Power MOSFET Gen- With Fast-RecoverySS*60R140SFDRev. 1.2Sep. 2022www.supersemi.com.cnSSF60R140SFD/SSP60R140SFD/SSW60R140SFD600V N-Channel Super-Junction MOSFET Gen-With Fast-RecoveryDescription FeaturesSJ-FET is new generation of high voltage MOSFET family tha

 9.26. Size:932K  cn super semi
ssf60r105sfd2 ssp60r105sfd2.pdf

SSF6007
SSF6007

SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor600V Super Junction Power MOSFET Gen- With Fast-RecoverySS*60R105SFD2Rev. 1.2Nov. 2022www.supersemi.com.cnSSF60R105SFD2/SSP60R105SFD2600V N-Channel Super-Junction MOSFET Gen-With Fast-RecoveryDescription FeaturesSJ-FET is new generation of high voltage MOSFET family that Mult

 9.27. Size:1005K  cn super semi
ssf60r260s2 ssp60r260s2.pdf

SSF6007
SSF6007

SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor600V Super Junction Power MOSFET Gen-SS*60R260S2Rev. 1.4Oct. 2022www.supersemi.com.cnSSF60R260S2/SSP60R260S2600V N-Channel Super-Junction MOSFET Gen-Description FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FETis utilizing an advance

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