All MOSFET. SSF6007 Datasheet

 

SSF6007 Datasheet and Replacement


   Type Designator: SSF6007
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.23 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 0.13 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 1.3 nS
   Cossⓘ - Output Capacitance: 18 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 7 Ohm
   Package: SOT23
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SSF6007 Datasheet (PDF)

 ..1. Size:503K  silikron
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SSF6007

SSF6007 Main Product Characteristics: VDSS -50V 60076007 RDS(on) 2.1ohm(typ.) ID -130mA Marking and p in Schematic dia gram SOT-23 Assignment Features and Benefits: Advanced MOSFET process technology Special designed for Line current interrupter in telephone sets, Relay, high speed and line transformer drivers and general purpose applications Ultra l

 ..2. Size:370K  goodark
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SSF6007

SSF6007 50V P-Channel MOSFET Main Product Characteristics VDSS -50V 60076007 RDS(on) 2.1ohm(typ.) ID -130mA Mark in g a nd P i n Sc hema t ic D i a gra m SOT-23 Assignment Features and Benefits Advanced trench MOSFET process technology Special designed for Line current interrupter in telephone sets, Relay, high speed and line transformer drivers and genera

 8.1. Size:597K  silikron
 ssf6008.pdf pdf_icon

SSF6007

SSF6008 Feathers: ID =84A Advanced trench process technology BV=60V avalanche energy, 100% test Rdson=8m Fully characterized avalanche voltage and current Description: The SSF6008 is a new generation of high voltage and low current NChannel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical parameter

 8.2. Size:339K  silikron
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SSF6007

SSF6005Main Product Characteristics: VDSS 60V RDS(on) 2.7m(typ.) ID 160AMarking and pin TO-220Schematic diagramAssignmentFeatures and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175 o

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Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: IXTQ182N055T | CS20N50ANH | DMNH10H028SCT | WMK18N50D1B | BLM04N06-P | MTN7002ZS3 | IRLS4030

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