All MOSFET. SSF6007 Datasheet

 

SSF6007 Datasheet and Replacement


   Type Designator: SSF6007
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.23 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.13 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 1.3 nS
   Cossⓘ - Output Capacitance: 18 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 7 Ohm
   Package: SOT23
 

 SSF6007 substitution

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SSF6007 Datasheet (PDF)

 ..1. Size:503K  silikron
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SSF6007

SSF6007 Main Product Characteristics: VDSS -50V 60076007 RDS(on) 2.1ohm(typ.) ID -130mA Marking and p in Schematic dia gram SOT-23 Assignment Features and Benefits: Advanced MOSFET process technology Special designed for Line current interrupter in telephone sets, Relay, high speed and line transformer drivers and general purpose applications Ultra l

 ..2. Size:370K  goodark
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SSF6007

SSF6007 50V P-Channel MOSFET Main Product Characteristics VDSS -50V 60076007 RDS(on) 2.1ohm(typ.) ID -130mA Mark in g a nd P i n Sc hema t ic D i a gra m SOT-23 Assignment Features and Benefits Advanced trench MOSFET process technology Special designed for Line current interrupter in telephone sets, Relay, high speed and line transformer drivers and genera

 8.1. Size:597K  silikron
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SSF6007

SSF6008 Feathers: ID =84A Advanced trench process technology BV=60V avalanche energy, 100% test Rdson=8m Fully characterized avalanche voltage and current Description: The SSF6008 is a new generation of high voltage and low current NChannel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical parameter

 8.2. Size:339K  silikron
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SSF6007

SSF6005Main Product Characteristics: VDSS 60V RDS(on) 2.7m(typ.) ID 160AMarking and pin TO-220Schematic diagramAssignmentFeatures and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175 o

Datasheet: SSF5NS70UG , SSS1004 , SSS1004A7 , SSS1206 , SSS1206H , SSS1510 , SSF11NS65UF , SSF6005 , IRF1407 , SSF6008 , SSF6010 , SSF6010A , SSF6014 , SSF6014A , SSF6014D , SSF6014J7 , SSF6014J8 .

History: SI7322DN | SRT15N110HTC | IRHY9230CM | STB40NS15 | SNN3100L10Q | IRFB61N15D | JFPC2N80C

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