SSF6816 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SSF6816

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 108 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 68 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 60 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 14.2 nS

Cossⓘ - Capacitancia de salida: 190 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.016 Ohm

Encapsulados: TO220

 Búsqueda de reemplazo de SSF6816 MOSFET

- Selecciónⓘ de transistores por parámetros

 

SSF6816 datasheet

 ..1. Size:472K  silikron
 ssf6816.pdf pdf_icon

SSF6816

SSF6816 Feathers ID =60A Advanced trench process technology BV=68V avalanche energy, 100% test Rdson=16m max. Fully characterized avalanche voltage and current Description The SSF6816 is a new generation of middle voltage and high current N Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and elect

 8.1. Size:469K  silikron
 ssf6814.pdf pdf_icon

SSF6816

SSF6814 Feathers ID =60A Advanced trench process technology BV=68V avalanche energy, 100% test Rdson=14m max. Fully characterized avalanche voltage and current Description The SSF6814 is a new generation of middle voltage and high current N Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and elect

 9.1. Size:515K  silikron
 ssf6808.pdf pdf_icon

SSF6816

SSF6808 Feathers ID =84A Advanced trench process technology BV=68V Ultra low Rdson, typical 6mohm Rdson=8mohm High avalanche energy, 100% test Fully characterized avalanche voltage and current Description The SSF6808 is a new generation of middle voltage and high current N Channel enhancement mode trench power MOSFET. This new technology increases the device

 9.2. Size:575K  silikron
 ssf6808d.pdf pdf_icon

SSF6816

SSF6808D Main Product Characteristics VDSS 68V RDS(on) 6.1mohm(typ.) ID 79A Mar ki ng a nd p in DPAK Sche ma ti c di agr a m Assignment Features and Benefits Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body

MOSTRAR MÁS

Otros transistores... SSF6114, SSF6401, SSF6646, SSF6670, SSF6808, SSF6808A, SSF6808D, SSF6814, 8N60, SSF6908, SSF6N40D, SSF6N60G, SSF6N70G, SSF6N70GM, SSF6N80A6, SSF6N80F, SSF6N80G