SSF6816 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SSF6816
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 108 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 68 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 60 A
Tjⓘ - Максимальная температура канала: 175 °C
trⓘ - Время нарастания: 14.2 ns
Cossⓘ - Выходная емкость: 190 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.016 Ohm
Тип корпуса: TO220
SSF6816 Datasheet (PDF)
ssf6816.pdf
SSF6816 Feathers: ID =60A Advanced trench process technology BV=68V avalanche energy, 100% test Rdson=16mmax. Fully characterized avalanche voltage and current Description: The SSF6816 is a new generation of middle voltage and high current NChannel enhancement mode trench power MOSFET. This new technology increases the device reliability and elect
ssf6814.pdf
SSF6814 Feathers: ID =60A Advanced trench process technology BV=68V avalanche energy, 100% test Rdson=14mmax. Fully characterized avalanche voltage and current Description: The SSF6814 is a new generation of middle voltage and high current NChannel enhancement mode trench power MOSFET. This new technology increases the device reliability and elect
ssf6808.pdf
SSF6808 Feathers: ID =84A Advanced trench process technology BV=68V Ultra low Rdson, typical 6mohm Rdson=8mohm High avalanche energy, 100% test Fully characterized avalanche voltage and current Description: The SSF6808 is a new generation of middle voltage and high current NChannel enhancement mode trench power MOSFET. This new technology increases the device
ssf6808d.pdf
SSF6808D Main Product Characteristics: VDSS 68V RDS(on) 6.1mohm(typ.) ID 79A Mar ki ng a nd p in DPAK Sche ma ti c di agr a m Assignment Features and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body
ssf6808a.pdf
SSF6808A Feathers: ID =84A Advanced trench process technology BV=68V Ultra low Rdson, typical 5mohm Rdson=8mohm High avalanche energy, 100% test Fully characterized avalanche voltage and current Description: The SSF6808A is a new generation of middle voltage and high current NChannel enhancement mode trench power MOSFET. This new technology increases t
Другие MOSFET... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918