SSF6816 Feathers: ID =60A Advanced trench process technology BV=68V avalanche energy, 100% test Rdson=16mmax. Fully characterized avalanche voltage and current Description: The SSF6816 is a new generation of middle voltage and high current NChannel enhancement mode trench power MOSFET. This new technology increases the device reliability and elect

SSF6814 Feathers: ID =60A Advanced trench process technology BV=68V avalanche energy, 100% test Rdson=14mmax. Fully characterized avalanche voltage and current Description: The SSF6814 is a new generation of middle voltage and high current NChannel enhancement mode trench power MOSFET. This new technology increases the device reliability and elect

SSF6808 Feathers: ID =84A Advanced trench process technology BV=68V Ultra low Rdson, typical 6mohm Rdson=8mohm High avalanche energy, 100% test Fully characterized avalanche voltage and current Description: The SSF6808 is a new generation of middle voltage and high current NChannel enhancement mode trench power MOSFET. This new technology increases the device

SSF6808D Main Product Characteristics: VDSS 68V RDS(on) 6.1mohm(typ.) ID 79A Mar ki ng a nd p in DPAK Sche ma ti c di agr a m Assignment Features and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body

SSF6808A Feathers: ID =84A Advanced trench process technology BV=68V Ultra low Rdson, typical 5mohm Rdson=8mohm High avalanche energy, 100% test Fully characterized avalanche voltage and current Description: The SSF6808A is a new generation of middle voltage and high current NChannel enhancement mode trench power MOSFET. This new technology increases t