SSF6816
MOSFET. Datasheet pdf. Equivalent
Type Designator: SSF6816
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 108
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 68
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 60
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 45
nC
trⓘ - Rise Time: 14.2
nS
Cossⓘ -
Output Capacitance: 190
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.016
Ohm
Package:
TO220
SSF6816
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SSF6816
Datasheet (PDF)
..1. Size:472K silikron
ssf6816.pdf
SSF6816 Feathers: ID =60A Advanced trench process technology BV=68V avalanche energy, 100% test Rdson=16mmax. Fully characterized avalanche voltage and current Description: The SSF6816 is a new generation of middle voltage and high current NChannel enhancement mode trench power MOSFET. This new technology increases the device reliability and elect
8.1. Size:469K silikron
ssf6814.pdf
SSF6814 Feathers: ID =60A Advanced trench process technology BV=68V avalanche energy, 100% test Rdson=14mmax. Fully characterized avalanche voltage and current Description: The SSF6814 is a new generation of middle voltage and high current NChannel enhancement mode trench power MOSFET. This new technology increases the device reliability and elect
9.1. Size:515K silikron
ssf6808.pdf
SSF6808 Feathers: ID =84A Advanced trench process technology BV=68V Ultra low Rdson, typical 6mohm Rdson=8mohm High avalanche energy, 100% test Fully characterized avalanche voltage and current Description: The SSF6808 is a new generation of middle voltage and high current NChannel enhancement mode trench power MOSFET. This new technology increases the device
9.2. Size:575K silikron
ssf6808d.pdf
SSF6808D Main Product Characteristics: VDSS 68V RDS(on) 6.1mohm(typ.) ID 79A Mar ki ng a nd p in DPAK Sche ma ti c di agr a m Assignment Features and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body
9.3. Size:460K silikron
ssf6808a.pdf
SSF6808A Feathers: ID =84A Advanced trench process technology BV=68V Ultra low Rdson, typical 5mohm Rdson=8mohm High avalanche energy, 100% test Fully characterized avalanche voltage and current Description: The SSF6808A is a new generation of middle voltage and high current NChannel enhancement mode trench power MOSFET. This new technology increases t
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