SSF7508 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SSF7508
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 200 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 75 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 100 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 18 nS
   Cossⓘ - Capacitancia de salida: 402 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.008 Ohm
   Paquete / Cubierta: TO220

Búsqueda de reemplazo de MOSFET SSF7508

SSF7508 Datasheet (PDF)

..1. Size:513K silikron
ssf7508.pdf

SSF7508 Main Product Characteristics: VDSS 75V RDS(on) 6m (typ.) ID 100A S che mati c di agra m TO-220 Marking a nd p in Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

0.1. Size:383K silikron
ssf7508a.pdf

SSF7508AMain Product Characteristics: VDSS 75V RDS(on) 6m (typ.) ID 100AD2PAKMarking and pin Schematic diagramAssignmentFeatures and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

8.1. Size:426K silikron
ssf7504.pdf

SSF7504 Feathers: ID=220A Advanced trench process technology BV=75V Special designed for Convertors and power controls Rdson=2.7m(typ.) High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current Avalanche Energy 100% test Description: The SSF7504 is a new generation of middle voltage and high current NChannel enhancemen

8.2. Size:482K silikron
ssf7509b.pdf

SSF7509B Main Product Characteristics: VDSS 70V RDS(on) 5.3m(typ.) ID 100A Marking and Pi n TO-220 Schematic Diagram Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

8.3. Size:417K silikron
ssf7505.pdf

SSF7505Main Product Characteristics: VDSS 75V RDS(on) 3.3mohm(typ.)ID 170AMarking and pin TO220Schematic diagramAssignmentFeatures and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175

8.4. Size:568K silikron
ssf7504h.pdf

SSF7504H Main Product Characteristics: VDSS 75V RDS(on) 3.9m(typ.) ID 220A Marking and p in TO- 247 Schematic diagram Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recover

8.5. Size:415K silikron
ssf7507.pdf

SSF7507Main Product Characteristics: VDSS 75V RDS(on) 5mohm(typ.)ID 110ATO220Marking and pin Schematic diagramAssignmentFeatures and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175

8.6. Size:396K silikron
ssf7509a.pdf

SSF7509AMain Product Characteristics: VDSS 75V RDS(on) 6.5mohm(typ.)ID 80AMarking and pin D2PAKSchematic diagramAssignmentFeatures and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175

8.7. Size:300K silikron
ssf7509j7.pdf

SSF7509J7Main Product Characteristics: VDSS 80V RDS(on) 7.5mohm(typ.)ID 70AMarking and pin PQFN5*6Schematic diagramAssignmentFeatures and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

8.8. Size:470K silikron
ssf7504a7.pdf

SSF7504A7 Main Product Characteristics: VDSS 75V 1, Gate RDS(on) 2.5m(typ.) 2~3,5~7 Source 4,8 Drain ID 220A Schematic Diagram TO-263-7L Pin Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching

8.9. Size:396K silikron
ssf7504a.pdf

SSF7504A Feathers: ID=220A Advanced trench process technology BV=75V Special designed for Convertors and power controls Rdson=2.7m(typ.) High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current Avalanche Energy 100% test Description: The SSF7504A is a new generation of middle voltage and high current NChannel enhancem

8.10. Size:392K silikron
ssf7509.pdf

SSF7509 Feathers: ID=80A Advanced trench process technology BV=80V Special designed for Convertors and power controls Rdson=6.5m(Typ.) High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current Avalanche Energy 100% test Description: The SSF7509 is a new generation of middle voltage and high current NChannel enhancement

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