Справочник MOSFET. SSF7508

 

SSF7508 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: SSF7508
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 200 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 75 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 100 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 18 ns
   Cossⓘ - Выходная емкость: 402 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.008 Ohm
   Тип корпуса: TO220
 

 Аналог (замена) для SSF7508

   - подбор ⓘ MOSFET транзистора по параметрам

 

SSF7508 Datasheet (PDF)

 ..1. Size:513K  silikron
ssf7508.pdfpdf_icon

SSF7508

SSF7508 Main Product Characteristics: VDSS 75V RDS(on) 6m (typ.) ID 100A S che mati c di agra m TO-220 Marking a nd p in Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

 0.1. Size:383K  silikron
ssf7508a.pdfpdf_icon

SSF7508

SSF7508AMain Product Characteristics: VDSS 75V RDS(on) 6m (typ.) ID 100AD2PAKMarking and pin Schematic diagramAssignmentFeatures and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

 8.1. Size:426K  silikron
ssf7504.pdfpdf_icon

SSF7508

SSF7504 Feathers: ID=220A Advanced trench process technology BV=75V Special designed for Convertors and power controls Rdson=2.7m(typ.) High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current Avalanche Energy 100% test Description: The SSF7504 is a new generation of middle voltage and high current NChannel enhancemen

 8.2. Size:482K  silikron
ssf7509b.pdfpdf_icon

SSF7508

SSF7509B Main Product Characteristics: VDSS 70V RDS(on) 5.3m(typ.) ID 100A Marking and Pi n TO-220 Schematic Diagram Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

Другие MOSFET... SSF6NS70UGS , SSF6NS70UGX , SSF7504 , SSF7504A , SSF7504A7 , SSF7504H , SSF7505 , SSF7507 , IRFP064N , SSF7508A , SSF7509A , SSF7509B , SSF7509J7 , SSF7510 , SSF7604 , SSF7607 , SSF7609 .

History: NCE20ND15Q | WMO60N02T1 | WMJ12N120D1

 

 
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