SSF7508 MOSFET. Datasheet pdf. Equivalent
Type Designator: SSF7508
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 200 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 100 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 120 nC
trⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 402 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
Package: TO220
SSF7508 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SSF7508 Datasheet (PDF)
ssf7508.pdf
SSF7508 Main Product Characteristics: VDSS 75V RDS(on) 6m (typ.) ID 100A S che mati c di agra m TO-220 Marking a nd p in Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery
ssf7508a.pdf
SSF7508AMain Product Characteristics: VDSS 75V RDS(on) 6m (typ.) ID 100AD2PAKMarking and pin Schematic diagramAssignmentFeatures and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery
ssf7504.pdf
SSF7504 Feathers: ID=220A Advanced trench process technology BV=75V Special designed for Convertors and power controls Rdson=2.7m(typ.) High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current Avalanche Energy 100% test Description: The SSF7504 is a new generation of middle voltage and high current NChannel enhancemen
ssf7509b.pdf
SSF7509B Main Product Characteristics: VDSS 70V RDS(on) 5.3m(typ.) ID 100A Marking and Pi n TO-220 Schematic Diagram Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery
ssf7505.pdf
SSF7505Main Product Characteristics: VDSS 75V RDS(on) 3.3mohm(typ.)ID 170AMarking and pin TO220Schematic diagramAssignmentFeatures and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175
ssf7504h.pdf
SSF7504H Main Product Characteristics: VDSS 75V RDS(on) 3.9m(typ.) ID 220A Marking and p in TO- 247 Schematic diagram Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recover
ssf7507.pdf
SSF7507Main Product Characteristics: VDSS 75V RDS(on) 5mohm(typ.)ID 110ATO220Marking and pin Schematic diagramAssignmentFeatures and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175
ssf7509a.pdf
SSF7509AMain Product Characteristics: VDSS 75V RDS(on) 6.5mohm(typ.)ID 80AMarking and pin D2PAKSchematic diagramAssignmentFeatures and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175
ssf7509j7.pdf
SSF7509J7Main Product Characteristics: VDSS 80V RDS(on) 7.5mohm(typ.)ID 70AMarking and pin PQFN5*6Schematic diagramAssignmentFeatures and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery
ssf7504a7.pdf
SSF7504A7 Main Product Characteristics: VDSS 75V 1, Gate RDS(on) 2.5m(typ.) 2~3,5~7 Source 4,8 Drain ID 220A Schematic Diagram TO-263-7L Pin Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching
ssf7504a.pdf
SSF7504A Feathers: ID=220A Advanced trench process technology BV=75V Special designed for Convertors and power controls Rdson=2.7m(typ.) High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current Avalanche Energy 100% test Description: The SSF7504A is a new generation of middle voltage and high current NChannel enhancem
ssf7509.pdf
SSF7509 Feathers: ID=80A Advanced trench process technology BV=80V Special designed for Convertors and power controls Rdson=6.5m(Typ.) High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current Avalanche Energy 100% test Description: The SSF7509 is a new generation of middle voltage and high current NChannel enhancement
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918