SSFT3906 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SSFT3906

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 91 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 90 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 48.9 nS

Cossⓘ - Capacitancia de salida: 439 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.006 Ohm

Encapsulados: TO220

 Búsqueda de reemplazo de SSFT3906 MOSFET

- Selecciónⓘ de transistores por parámetros

 

SSFT3906 datasheet

 ..1. Size:454K  silikron
 ssft3906.pdf pdf_icon

SSFT3906

SSFT3906 Main Product Characteristics VDSS 30V SSFT3906 RDS(on) 3.2mohm(typ.) ID 90A TO220 Marking and pin Schematic diagram Assignment Features and Benefits Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recove

 7.1. Size:719K  silikron
 ssft3904u.pdf pdf_icon

SSFT3906

SSFT3904U Main Product Characteristics VDSS 35V SSFT3904U SSFT3904U RDS(on) 3.0mohm(typ.) ID 110A Ma r ki ng a n d pin Schema ti c di agr a m TO220 Assignment Features and Benefits Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast sw

 7.2. Size:759K  silikron
 ssft3904.pdf pdf_icon

SSFT3906

SSFT3904 Main Product Characteristics VDSS 30V RDS(on) 2.6m (typ.) ID 110A Mar ki ng a nd p in TO220 Schema ti c di agr a m Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recove

 7.3. Size:521K  silikron
 ssft3904j7-hf.pdf pdf_icon

SSFT3906

SSFT3904J7-HF Main Product Characteristics VDSS 30V RDS(on) 3m (typ.) ID 120A PQFN5*6-8L Schematic diagram Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150 operating tem

MOSTRAR MÁS

Otros transistores... SSFN2316E, SSFN2569, SSFN3313, SSFN3317, SSFN6816, SSFT3904, SSFT3904J7-HF, SSFT3904U, IRF520, SSFT4002, SSFT4003, SSFT4003A, SSFT4004, SSPL1010, SSPL1022, SSPL1042, SSPL1090