Справочник MOSFET. SSFT3906

 

SSFT3906 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: SSFT3906
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 91 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 90 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 48.9 ns
   Cossⓘ - Выходная емкость: 439 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.006 Ohm
   Тип корпуса: TO220
     - подбор MOSFET транзистора по параметрам

 

SSFT3906 Datasheet (PDF)

 ..1. Size:454K  silikron
ssft3906.pdfpdf_icon

SSFT3906

SSFT3906Main Product Characteristics: VDSS 30V SSFT3906 RDS(on) 3.2mohm(typ.)ID 90A TO220Marking and pin Schematic diagramAssignmentFeatures and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recove

 7.1. Size:719K  silikron
ssft3904u.pdfpdf_icon

SSFT3906

SSFT3904U Main Product Characteristics: VDSS 35V SSFT3904USSFT3904U RDS(on) 3.0mohm(typ.) ID 110A Ma r ki ng a n d pin Schema ti c di agr a m TO220 Assignment Features and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast sw

 7.2. Size:759K  silikron
ssft3904.pdfpdf_icon

SSFT3906

SSFT3904 Main Product Characteristics: VDSS 30V RDS(on) 2.6m (typ.) ID 110A Mar ki ng a nd p in TO220 Schema ti c di agr a m Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recove

 7.3. Size:521K  silikron
ssft3904j7-hf.pdfpdf_icon

SSFT3906

SSFT3904J7-HFMain Product Characteristics: VDSS 30V RDS(on) 3m (typ.) ID 120APQFN5*6-8LSchematic diagramFeatures and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150 operating tem

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History: DH033N03 | ELM34409AA | TMP10N65A | 8N60G-TF2-T | FDS8949 | AP1A003GMT | 1002

 

 
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