SSFT3906
MOSFET. Datasheet pdf. Equivalent
Type Designator: SSFT3906
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 91
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 90
A
Tjⓘ - Maximum Junction Temperature: 175
°C
trⓘ - Rise Time: 48.9
nS
Cossⓘ -
Output Capacitance: 439
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.006
Ohm
Package:
TO220
SSFT3906
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SSFT3906
Datasheet (PDF)
..1. Size:454K silikron
ssft3906.pdf
SSFT3906Main Product Characteristics: VDSS 30V SSFT3906 RDS(on) 3.2mohm(typ.)ID 90A TO220Marking and pin Schematic diagramAssignmentFeatures and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recove
7.1. Size:719K silikron
ssft3904u.pdf
SSFT3904U Main Product Characteristics: VDSS 35V SSFT3904USSFT3904U RDS(on) 3.0mohm(typ.) ID 110A Ma r ki ng a n d pin Schema ti c di agr a m TO220 Assignment Features and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast sw
7.2. Size:759K silikron
ssft3904.pdf
SSFT3904 Main Product Characteristics: VDSS 30V RDS(on) 2.6m (typ.) ID 110A Mar ki ng a nd p in TO220 Schema ti c di agr a m Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recove
7.3. Size:521K silikron
ssft3904j7-hf.pdf
SSFT3904J7-HFMain Product Characteristics: VDSS 30V RDS(on) 3m (typ.) ID 120APQFN5*6-8LSchematic diagramFeatures and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150 operating tem
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