2SK2077 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SK2077
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 150 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 170 nS
   Cossⓘ - Capacitancia de salida: 160 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.7 Ohm
   Paquete / Cubierta: SC65

Búsqueda de reemplazo de MOSFET 2SK2077

2SK2077 Datasheet (PDF)

..1. Size:63K no
2sk2077.pdf

..2. Size:219K inchange semiconductor
2sk2077.pdf

isc N-Channel MOSFET Transistor 2SK2077DESCRIPTIONDrain Current I = 7A@ T =25D CDrain Source Voltage-: V = 800V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drai

8.1. Size:59K 1
2sk2070.pdf

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2070N-CHANNEL MOS FETFOR HIGH-SPEED SWITCHINGThe 2SK2070 is a N-channel MOS FET of a vertical type andPACKAGE DIMENSIONS (in mm)7.0 MAX.1.2is a switching element that can be directly driven by the output ofan IC operating at 5 V.This product has a low ON resistance and superb switchingcharacteristics and is ideal for driving the ac

8.2. Size:132K st
2sk2078 stw9na80.pdf

STW9NA80STH9NA80FI N - CHANNEL 800V - 0.85 - 9.1A - TO-247/ISOWATT218FAST POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTW9NA80 800 V

8.3. Size:218K toshiba
2sk2078.pdf

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8.4. Size:94K sanyo
2sk2074.pdf

Ordering number:ENN4499N-Channel Junction Silicon FET2SK2074High-Frequency Low-NoiseAmplifier ApplicationsApplications Package Dimensions AM tuner RF amplifier applications.unit:mm Low-noise amplifier.2034A[2SK2074]2.24.0Features Large | yfs |. Small Ciss.0.40.5 Ultralow noise figure.0.40.41 2 31 : Source1.3 1.32 : Gate3 : Drain

8.5. Size:201K fuji
2sk2071-01l-s.pdf

N-channel MOS-FET2SK2071-01L,SFAP-IIA Series 600V 6,5 2A 20W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Avalanche Proof> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteristics > Equ

8.6. Size:224K inchange semiconductor
2sk2078.pdf

isc N-Channel MOSFET Transistor 2SK2078DESCRIPTIONDrain Current I = 9A@ T =25D CDrain Source Voltage-: V = 800V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drai

8.7. Size:201K inchange semiconductor
2sk2071-01l.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor 2SK2071-01LFEATURESHigh speed switchingLow On-ResistanceLow driving powerHigh voltageMinimum Lot-to-Lot variations for robust device performanceand reliable operationDESCRIPTIONSwitching regulatorsUPSDC-DC convertersGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA

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